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NVMFS5C442NWFAFT1G
+NomenclatureMOSFET N-CH 40V 29A/140A 5DFN
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FabricantSemi - conducteurs
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Pièce fabricant #NVMFS5C442NWFAFT1G
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Package TDFN-8
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En stock2291
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 29A (Ta), 140A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.3mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2100 pF @ 25 V |
| Power Dissipation (Max) | 3.7W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Présentation
Description
Key features include a low RDS(on) value, which minimizes conduction losses, and a high current-carrying capability. It supports a wide range of voltages, enhancing its versatility in different circuit configurations. The MOSFET is also built to withstand higher levels of stress and temperature, which improves reliability in demanding environments.
The NVMFS5C442NWFAFT1G typically comes in a compact DFN package, allowing for efficient thermal management and space-saving in circuit designs. This makes it especially useful in compact or portable devices where efficient power management and heat dissipation are critical. Overall, it is designed to deliver high performance and reliability for modern electronic systems.
Equivalent
1. Vishay's SiR462DP
2. Infineon's BSC100N04LS
3. Texas Instruments' CSD18533KCS
Always verify specifications such as Rds(on), gate charge, and package to ensure compatibility with your design.
Features
1. TrenchFET Technology: Utilizes advanced trench technology to offer low on-resistance, enhancing efficiency and performance.
2. N-Channel Configuration: Allows for efficient current flow and is suitable for high-speed switching applications.
3. Low On-Resistance: Provides reduced power loss, improving thermal performance and overall efficiency.
4. 40V Drain-Source Voltage: Handles up to 40 volts, making it suitable for a range of power supply applications.
5. Continuous Drain Current: Supports substantial current capacity, suitable for power-intensive applications.
6. Thermal Characteristics: Designed to manage high temperatures effectively, ensuring reliability under load.
7. Compact Package: Available in a PowerPAK® SO-8 package, optimizing space on PCBs and facilitating easy integration.
8. ESD Protection: Equipped with protection against electrostatic discharge, enhancing durability and longevity.
These features make the NVMFS5C442NWFAFT1G ideal for applications in power management, automotive systems, and various consumer electronics.
Pinout
This MOSFET is commonly used for switching applications, particularly in power management circuits where efficient load switching is crucial. It is suitable for use in DC-DC converters, synchronous rectification in power supplies, and motor drive controls. The device is advantageous in designs requiring low on-resistance and high-speed switching.
For detailed pin functions, refer to the datasheet from ON Semiconductor, which provides specific information on the electrical characteristics, thermal performance, and recommended usage scenarios for this MOSFET.
Manufacturer
Application
1. DC-DC Converters: Utilized in power supply circuits for efficient voltage regulation.
2. Motor Control: Applied in driving motors for industrial and consumer electronics.
3. Load Switches: Acts as a switch in power distribution systems.
4. Battery Management: Used in power management circuits for battery charging systems.
5. Telecommunications: Provides efficient power handling in telecom equipment.
6. Automotive Systems: Integrated into automotive electronics for managing electrical loads.
These applications benefit from the device's capabilities in handling high current and voltage efficiently.