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NVMFS5C442NAFT1G
+NomenclatureMOSFET N-CH 40V 29A/140A 5DFN
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FabricantSemi - conducteurs
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Pièce fabricant #NVMFS5C442NAFT1G
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Package TDFN-8
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En stock3003
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 29A (Ta), 140A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.3mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2100 pF @ 25 V |
| Power Dissipation (Max) | 3.7W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Présentation
Description
Key features of this MOSFET include its low on-resistance, which reduces power loss, and high-speed switching capability, enhancing performance in various electronic circuits. Additionally, it offers a compact form factor, making it suitable for space-constrained applications such as in automotive or industrial environments.
The MOSFET is typically used in applications like power supplies, motor controls, and DC-DC converters. Its robust design also supports high thermal and current handling capabilities, which are critical for reliability in demanding applications.
Overall, the NVMFS5C442NAFT1G is a versatile component ideal for improving efficiency and performance in numerous power electronic systems.
Equivalent
Features
1. N-Channel MOSFET: It is an N-channel enhancement mode field-effect transistor.
2. Voltage Rating: Typically, it has a drain-source voltage (V_DS) of around 40V, making it suitable for medium voltage applications.
3. Current Capacity: The continuous drain current (I_D) at 25°C can handle significant currents, often around 62A, facilitating high current operations.
4. Low On-Resistance: Features low R_DS(on), which minimizes power loss during conduction, enhancing efficiency.
5. Package Type: Usually offered in a compact PowerTrench® package, such as an SO-8FL, which aids in efficient thermal management.
6. Thermal Performance: The design supports effective heat dissipation, crucial for high-power applications.
7. Applications: Ideal for use in power management applications, including DC-DC converters, motor drives, and load switches.
Overall, the NVMFS5C442NAFT1G is well-suited for applications requiring high efficiency and compact design.
Pinout
1. Drain (D): Connects to the drain of the MOSFET.
2. Source (S): Connects to the source of the MOSFET.
3. Gate (G): Connects to the gate of the MOSFET and controls its operation.
4. Body Diode: Often integrated into the MOSFET for protection against reverse voltage.
Each pin in the SO-8FL package is usually assigned to one of these functions, with multiple pins often connected internally to the same element (e.g., multiple pins for the drain or source) to handle higher currents and improve heat dissipation. For exact pin assignments and detailed electrical characteristics, it is best to consult the manufacturer's datasheet for the NVMFS5C442NAFT1G.
Manufacturer
Application
1. Automotive: Used in electronic control units (ECUs), motor drives, and battery management systems.
2. Consumer Electronics: Supports power management in devices like laptops, smartphones, and tablets.
3. Industrial: Utilized in motor control, power supplies, and automation equipment.
4. Telecommunications: Assists in power regulation for networking equipment and base stations.
5. Renewable Energy: Integrated into inverters and power optimizers for solar systems.
These applications leverage the MOSFET's low on-resistance and high efficiency.