Images à titre indicatif uniquement
NVMFS5113PLWFT1G
+NomenclatureMOSFET P-CH 60V 10A/64A 5DFN
-
FabricantSemi - conducteurs
-
Pièce fabricant #NVMFS5113PLWFT1G
-
En stock3447
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS5113 |
Présentation
Description
The NVMFS5113PLWFT1G is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage and high-speed applications. It is part of the ON Semiconductor's MOSFET family and features a low on-resistance, which allows for efficient power management with minimal heat generation.
This MOSFET is typically used in various applications, including power supply circuits, motor drivers, and other high-frequency switching tasks. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 30A, it is suitable for a range of consumer and industrial uses.
The package is designed to provide good thermal performance, and its small footprint makes it ideal for compact designs. The NVMFS5113PLWFT1G is characterized by fast switching times and low gate charge, enhancing overall circuit efficiency. It is essential to consider its specifications and thermal characteristics when integrating it into electronic designs.
This MOSFET is typically used in various applications, including power supply circuits, motor drivers, and other high-frequency switching tasks. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 30A, it is suitable for a range of consumer and industrial uses.
The package is designed to provide good thermal performance, and its small footprint makes it ideal for compact designs. The NVMFS5113PLWFT1G is characterized by fast switching times and low gate charge, enhancing overall circuit efficiency. It is essential to consider its specifications and thermal characteristics when integrating it into electronic designs.
Equivalent
The NVMFS5113PLWFT1G is a N-channel MOSFET. Equivalent products include the AO3400, BSS138, and IRF3708. When searching for alternatives, ensure they match voltage, current ratings, and package type to ensure compatibility. Additionally, always check specific datasheets for detailed electrical characteristics before making substitutions.
Features
The NVMFS5113PLWFT1G is a N-channel MOSFET designed for various applications requiring efficient power management. Key features include:
1. Voltage Rating: 30V maximum drain-source voltage (Vds).
2. Current Rating: Capable of handling up to 51A continuous drain current (Id) in proper cooling conditions.
3. RDS(on): Low on-resistance of approximately 5.5 mΩ at Vgs = 10V, ensuring minimal power loss and heat generation.
4. Fast Switching: Designed for fast switching applications, making it suitable for converters and amplifiers.
5. Package: Available in a compact TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: Low gate threshold voltage (Vgs) for enhanced performance with low drive voltages.
7. Robustness: Built with a high level of reliability and thermal performance, ensuring long-term operation in demanding environments.
These features make the NVMFS5113PLWFT1G an excellent choice for power supply, motor control, and other high-efficiency applications.
1. Voltage Rating: 30V maximum drain-source voltage (Vds).
2. Current Rating: Capable of handling up to 51A continuous drain current (Id) in proper cooling conditions.
3. RDS(on): Low on-resistance of approximately 5.5 mΩ at Vgs = 10V, ensuring minimal power loss and heat generation.
4. Fast Switching: Designed for fast switching applications, making it suitable for converters and amplifiers.
5. Package: Available in a compact TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: Low gate threshold voltage (Vgs) for enhanced performance with low drive voltages.
7. Robustness: Built with a high level of reliability and thermal performance, ensuring long-term operation in demanding environments.
These features make the NVMFS5113PLWFT1G an excellent choice for power supply, motor control, and other high-efficiency applications.
Pinout
The NVMFS5113PLWFT1G is a power MOSFET from ON Semiconductor, specifically designed for applications in power management and switching. It features a total of 8 pins.
Pin Count and Functions:
1. Gate (G) - Controls the switching of the MOSFET.
2. Source (S) - The terminal through which current flows out of the MOSFET.
3. Drain (D) - The terminal through which current flows into the MOSFET.
4. Drain (D) - Another drain terminal for enhanced electrical connectivity (if applicable).
5. Source (S) - Another source terminal for enhanced electrical connectivity (if applicable).
6. Gate (G) - Additional gate for possibly parallel configurations (if applicable).
7. Body Diode - Provides paths for current when the MOSFET is off (internal, not a pin).
8. Thermal Pad - For heat dissipation (not a pin but important for thermal management).
The device is typically used in applications such as DC-DC converters and motor drivers due to its high efficiency and low on-resistance.
Pin Count and Functions:
1. Gate (G) - Controls the switching of the MOSFET.
2. Source (S) - The terminal through which current flows out of the MOSFET.
3. Drain (D) - The terminal through which current flows into the MOSFET.
4. Drain (D) - Another drain terminal for enhanced electrical connectivity (if applicable).
5. Source (S) - Another source terminal for enhanced electrical connectivity (if applicable).
6. Gate (G) - Additional gate for possibly parallel configurations (if applicable).
7. Body Diode - Provides paths for current when the MOSFET is off (internal, not a pin).
8. Thermal Pad - For heat dissipation (not a pin but important for thermal management).
The device is typically used in applications such as DC-DC converters and motor drivers due to its high efficiency and low on-resistance.
Manufacturer
The manufacturer of the NVMFS5113PLWFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs and manufactures a wide range of electronic components and solutions. Their products include discrete semiconductors, analog ICs, logic devices, and sensors, catering to various markets such as automotive, industrial, communications, and consumer electronics. The company is known for its focus on energy-efficient technologies and has a strong emphasis on sustainability and innovation in the semiconductor industry.
Application
The NVMFS5113PLWFT1G is a N-channel MOSFET designed for various applications, including power management in computing and consumer electronics, DC-DC converters, and motor control. It is suitable for use in high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Key areas include power supply circuits, battery management systems, and automotive applications, where reliable performance and thermal efficiency are critical. Its compact package also makes it ideal for space-constrained designs in modern devices.
Package
The NVMFS5113PLWFT1G is packaged in a PowerFLAT 5x6 mm package. This type of package is designed for efficient thermal management and compact circuit board layout.
