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NVMFS4C03NWFT1G
+NomenclatureMOSFET N-CH 30V 31.4A/143A 5DFN
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FabricantSemi - conducteurs
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Pièce fabricant #NVMFS4C03NWFT1G
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En stock9045
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Spécifications
| Attribut | Valeur |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 31.4A (Ta), 143A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45.2 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3071 pF @ 15 V |
| Power Dissipation (Max) | 3.71W (Ta), 77W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS4 |
Présentation
Description
The NVMFS4C03NWFT1G is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by NXP Semiconductors. It is designed for efficient power management and switching applications. Key features include a low on-resistance, high-speed switching capabilities, and a compact package, making it suitable for use in various electronic devices, including power supplies, motor drivers, and handheld electronics.
The device operates in the enhancement mode, allowing it to control electrical current effectively when voltage is applied to the gate terminal. It is known for high thermal stability and reliability, which are crucial in demanding applications.
When selecting this component, it’s essential to consider parameters like its maximum voltage, current ratings, and thermal characteristics to ensure compatibility with specific circuit designs. Overall, the NVMFS4C03NWFT1G is an important component in modern electronic applications requiring efficient power management.
The device operates in the enhancement mode, allowing it to control electrical current effectively when voltage is applied to the gate terminal. It is known for high thermal stability and reliability, which are crucial in demanding applications.
When selecting this component, it’s essential to consider parameters like its maximum voltage, current ratings, and thermal characteristics to ensure compatibility with specific circuit designs. Overall, the NVMFS4C03NWFT1G is an important component in modern electronic applications requiring efficient power management.
Equivalent
The NVMFS4C03NWFT1G is a power MOSFET typically used in various applications. Equivalent products include the NVMFS5C03N, SI4950BDY, and VSS9650. When looking for substitutes, ensure they match specifications such as voltage, current ratings, and package type to ensure compatibility in your application. Always verify through datasheets for precise electrical characteristics.
Features
The NVMFS4C03NWFT1G is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) up to 20A, allowing for efficient power management.
3. RDS(on): The on-resistance is low, typically around 10 mΩ, which minimizes power loss during operation.
4. Gate Threshold Voltage (VGS(th)): It has a gate threshold voltage ranging from 1V to 2.5V, facilitating fast switching.
5. Package: Available in a compact SO-8 surface-mount package, which aids in PCB space conservation.
6. Thermal Performance: It has good thermal resistance, supporting heat dissipation in high-performance applications.
Overall, the NVMFS4C03NWFT1G is ideal for power management, switching regulators, and other efficient electronic designs.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) up to 20A, allowing for efficient power management.
3. RDS(on): The on-resistance is low, typically around 10 mΩ, which minimizes power loss during operation.
4. Gate Threshold Voltage (VGS(th)): It has a gate threshold voltage ranging from 1V to 2.5V, facilitating fast switching.
5. Package: Available in a compact SO-8 surface-mount package, which aids in PCB space conservation.
6. Thermal Performance: It has good thermal resistance, supporting heat dissipation in high-performance applications.
Overall, the NVMFS4C03NWFT1G is ideal for power management, switching regulators, and other efficient electronic designs.
Pinout
The NVMFS4C03NWFT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in power management applications. It features a pin count of 4, which includes the following connections:
1. Gate (G): Controls the MOSFET operation by turning it on or off.
2. Drain (D): The output terminal where the load is connected and current flows out.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body (B): Internal connection to the source, usually not externally connected.
The device is designed for high efficiency and low on-resistance, making it suitable for applications like power converters, motor drives, and other power management systems. Its compact package and performance characteristics help improve overall system efficiency.
1. Gate (G): Controls the MOSFET operation by turning it on or off.
2. Drain (D): The output terminal where the load is connected and current flows out.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body (B): Internal connection to the source, usually not externally connected.
The device is designed for high efficiency and low on-resistance, making it suitable for applications like power converters, motor drives, and other power management systems. Its compact package and performance characteristics help improve overall system efficiency.
Manufacturer
The NVMFS4C03NWFT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor supplier that specializes in providing a wide range of products including energy-efficient solutions, sensors, and analog devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Established in 1999 and based in Phoenix, Arizona, ON Semiconductor focuses on enabling energy-efficient electronics and supports advancements in technologies such as the Internet of Things (IoT) and electric vehicles. Their portfolio includes power management, RF, and signal management components, making them a key player in the semiconductor industry.
Application
The NVMFS4C03NWFT1G is a N-channel MOSFET used primarily in power management applications. Its key application areas include:
1. Power Supply Circuits: Efficient switching in DC-DC converters and voltage regulators.
2. Motor Control: Driving motors in industrial automation and electric vehicles.
3. Load Switching: Managing power distribution in consumer electronics and appliances.
4. Class D Amplifiers: Enhancing audio amplification in audio equipment.
5. LED Drivers: Controlling LED lighting systems for energy efficiency.
The device's low on-resistance and fast switching capabilities make it suitable for high-efficiency applications.
1. Power Supply Circuits: Efficient switching in DC-DC converters and voltage regulators.
2. Motor Control: Driving motors in industrial automation and electric vehicles.
3. Load Switching: Managing power distribution in consumer electronics and appliances.
4. Class D Amplifiers: Enhancing audio amplification in audio equipment.
5. LED Drivers: Controlling LED lighting systems for energy efficiency.
The device's low on-resistance and fast switching capabilities make it suitable for high-efficiency applications.
Package
The NVMFS4C03NWFT1G is packaged in the SOT-23 surface mount configuration. This compact package type is designed for efficient thermal performance and space-saving in electronic circuit designs.
