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NVMFD5853NLWFT1G
+NomenclatureMOSFET 2N-CH 40V 12A 8DFN
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FabricantSemi - conducteurs
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Pièce fabricant #NVMFD5853NLWFT1G
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Fiche technique NVMFD5853NLWFT1G DataSheet
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Spécifications
| Attribut | Valeur |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Power - Max | 3W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Base Product Number | NVMFD5853 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Présentation
Description
The NVMFD5853NLWFT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in various applications. It features a low on-resistance, which minimizes conduction losses, making it suitable for use in power supplies, DC-DC converters, and motor control systems. This MOSFET can handle high voltage and current levels, with a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 30A.
The device is housed in a compact, thermally efficient package, facilitating easy integration into circuit designs. Its fast switching capabilities enable high-frequency operation, further enhancing its efficiency in power applications. Additionally, the NVMFD5853NLWFT1G typically comes with a range of protections against thermal runaway and overcurrent conditions, ensuring reliability and longevity in demanding environments. Overall, this MOSFET is a versatile component for modern electronic designs requiring robust power management solutions.
The device is housed in a compact, thermally efficient package, facilitating easy integration into circuit designs. Its fast switching capabilities enable high-frequency operation, further enhancing its efficiency in power applications. Additionally, the NVMFD5853NLWFT1G typically comes with a range of protections against thermal runaway and overcurrent conditions, ensuring reliability and longevity in demanding environments. Overall, this MOSFET is a versatile component for modern electronic designs requiring robust power management solutions.
Equivalent
The NVMFD5853NLWFT1G is an N-channel MOSFET. Equivalent products include the NVMFD5853NLWFT1, IRLZ44N and STP16NF06. Always verify specifications like voltage, current ratings, and packaging before substituting any component.
Features
The NVMFD5853NLWFT1G is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 18A, providing robust performance in power applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1.2V to 2.4V, allowing for efficient driving with low gate voltages.
5. Package: It is offered in a compact SOT-23 package, ideal for space-constrained designs.
6. Fast Switching Speed: The device is optimized for fast switching, enhancing efficiency in applications like DC-DC converters and motor drivers.
These features make the NVMFD5853NLWFT1G suitable for various power management and switching applications in consumer electronics and industrial systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 18A, providing robust performance in power applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1.2V to 2.4V, allowing for efficient driving with low gate voltages.
5. Package: It is offered in a compact SOT-23 package, ideal for space-constrained designs.
6. Fast Switching Speed: The device is optimized for fast switching, enhancing efficiency in applications like DC-DC converters and motor drivers.
These features make the NVMFD5853NLWFT1G suitable for various power management and switching applications in consumer electronics and industrial systems.
Pinout
The NVMFD5853NLWFT1G is a dual N-channel MOSFET from Nexperia, featuring a pin count of 8. It is designed for low voltage and high efficiency applications. The device is commonly used for power management and switching applications.
Its key functions include:
1. Low R_DS(on): Provides low on-resistance for efficient power conduction.
2. Fast Switching: Suitable for high-speed switching applications.
3. Dual Configuration: Contains two independent N-channel MOSFETs in one package, allowing for compact designs and simplified layouts.
The pinout typically includes the gate, drain, and source connections for both MOSFETs, allowing for flexible circuit configurations. It is important to refer to the specific datasheet for detailed pin assignments and electrical characteristics.
Its key functions include:
1. Low R_DS(on): Provides low on-resistance for efficient power conduction.
2. Fast Switching: Suitable for high-speed switching applications.
3. Dual Configuration: Contains two independent N-channel MOSFETs in one package, allowing for compact designs and simplified layouts.
The pinout typically includes the gate, drain, and source connections for both MOSFETs, allowing for flexible circuit configurations. It is important to refer to the specific datasheet for detailed pin assignments and electrical characteristics.
Manufacturer
The manufacturer of the NVMFD5853NLWFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor components used in various applications, including automotive, industrial, consumer electronics, and communications. The company provides solutions for power management, signal processing, and embedded systems, focusing on energy efficiency and performance. ON Semiconductor is recognized for its commitment to innovation and sustainability, offering a diverse product portfolio that includes power MOSFETs, diodes, analog ICs, and sensors. The company operates from multiple facilities worldwide and serves a broad customer base in multiple industries.
Application
The NVMFD5853NLWFT1G is a N-channel MOSFET designed for applications in power management, including DC-DC converters, power supplies, and load switching. It is suitable for automotive, industrial, and consumer electronics sectors, where efficient power handling and thermal performance are essential. Its low on-resistance and fast switching capabilities make it ideal for applications requiring high efficiency and reliability, such as motor control, battery management systems, and renewable energy systems.
Package
The NVMFD5853NLWFT1G is packaged in a SOT-23-6 configuration. This small, surface-mount package is designed for space efficiency and ease of integration in various electronic applications.
