NVD5867NLT4G

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NVD5867NLT4G

+Nomenclature

MOSFET N-CH 60V 6A/22A DPAK-3

  • FabricantSemi - conducteurs

  • Pièce fabricant #NVD5867NLT4G

  • Package TO-252-3

  • En stock6207

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Bulk
Series Automotive, AEC-Q101
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 6A (Ta), 22A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 39mOhm @ 11A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 675 pF @ 25 V
Power Dissipation (Max) 3.3W (Ta), 43W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3

Présentation

Description

The NVD5867NLT4G is a high-performance, low-dropout (LDO) voltage regulator from ON Semiconductor, designed for precision power management in electronic circuits. Key features include:
- Input Voltage Range: Up to 40V
- Output Voltage: Adjustable or fixed options (e.g., 5V)
- Low Dropout: Ensures stable output even with small input-output differentials
- High Accuracy: Tight voltage regulation (±1–2%)
- Low Quiescent Current: Improves efficiency in battery-powered applications
- Protections: Overcurrent, thermal shutdown, and reverse polarity protection
Commonly used in automotive, industrial, and consumer electronics, it provides reliable voltage regulation for sensitive components. Its compact package (e.g., DPAK) suits space-constrained designs.
For exact specs, refer to the datasheet.

Equivalent

Equivalent products to the NVD5867NLT4G (a Schottky diode from ON Semiconductor) include:
- SS56 (Fairchild/ON Semi)
- MBR0560 (ON Semi)
- SB560 (Diodes Inc.)
- SK56 (Vishay)
These are similar 5A, 60V Schottky diodes with comparable characteristics. Always verify datasheets for exact specs.

Pinout

The NVD5867NLT4G is a dual N-channel MOSFET in a DFN-10 (3x3mm) package with 10 pins.
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Logic-level gate drive (compatible with 3.3V/5V control signals).
- High current handling (suitable for power management applications).
Pin Configuration:
- Pins 1, 6, 7, 10: Drain terminals (D1, D2).
- Pins 2, 5: Gate terminals (G1, G2).
- Pins 3, 4, 8, 9: Source terminals (S1, S2, shared for thermal performance).
Commonly used in DC-DC converters, load switches, and motor control.

Manufacturer

The NVD5867NLT4G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The NVD5867NLT4G is a Schottky diode, part of onsemi's portfolio of high-performance electronic components.

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