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NTZS3151PT1G
+NomenclatureMOSFET P-CH 20V 860MA SOT563
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FabricantSemi - conducteurs
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Pièce fabricant #NTZS3151PT1G
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Fiche technique NTZS3151PT1G DataSheet
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En stock21118
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 860mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 150mOhm @ 950mA, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.6 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 458 pF @ 16 V |
| Power Dissipation (Max) | 170mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-563 |
Présentation
Description
Equivalent
1. BSS138
2. 2N7002
3. PMV20XN
It's important to compare specific electrical characteristics and package details to ensure compatibility. Always refer to the datasheets for confirmation.
Features
1. Type: N-channel MOSFET
2. Voltage Rating: It typically supports a drain-source voltage (V_ds) of up to 30V.
3. Current Rating: The MOSFET can handle a continuous drain current (I_d) of up to 1.0A.
4. R_DS(on): The on-resistance is relatively low, usually around 1.2Ω at V_gs = 10V, which minimizes power loss and enhances efficiency.
5. Package: It is available in a compact SOT-23 package, which is suitable for space-constrained applications.
6. Gate Threshold Voltage: The threshold voltage is around 1V, ensuring operation with logic-level signals.
7. Applications: It is ideal for use in load switching, power management, and DC-DC conversion circuits.
These features make the NTZS3151PT1G a versatile choice for applications requiring efficient and reliable switching in small form-factor designs.
Pinout
The pin count for the NTZS3151PT1G is 3, which are typically configured as:
1. Gate (G): The control pin that modulates the conductivity between the drain and source.
2. Source (S): The terminal through which the current enters the transistor.
3. Drain (D): The terminal through which the current exits the transistor.
The NTZS3151PT1G is often utilized in applications such as load switching and power management due to its efficiency and compact size.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation circuits for efficient power management in electronic devices.
2. Automotive Systems: Utilized in motor control circuits and other automotive electronic systems.
3. Consumer Electronics: Found in devices like smartphones, tablets, and laptops for battery management and load switching.
4. Industrial Equipment: Employed in industrial automation and control systems for effective power switching.
5. Lighting Systems: Used in LED drivers and lighting control applications.
Its small size and efficient performance make it suitable for compact and high-density circuit designs.