Images à titre indicatif uniquement
NTTFS5116PLTAG
+NomenclatureMOSFET P-CH 60V 5.7A 8WDFN
-
FabricantSemi - conducteurs
-
Pièce fabricant #NTTFS5116PLTAG
-
Package WDFN-8
-
En stock6525
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 5.7A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 52mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1258 pF @ 30 V |
| PowerDissipation(Max) | 3.2W (Ta), 40W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-WDFN (3.3x3.3) |
Présentation
Description
Equivalent
Features
1. N-Channel MOSFET: It features an N-channel enhancement mode, which is ideal for high-speed switching and efficient power conversion.
2. Voltage & Current Ratings: Typically designed to handle a drain-source voltage (V_DS) of up to 30V and a continuous drain current (I_D) of approximately 60A, making it suitable for moderately high-power applications.
3. R_DS(on): This device offers a low on-state resistance (R_DS(on)), which minimizes power dissipation and enhances efficiency in switching applications.
4. Package Type: It is commonly available in a PowerPAK SO-8 package, which provides excellent thermal performance and compact size, suitable for space-constrained applications.
5. Applications: Used in DC-DC converters, power management systems, and motor control circuits due to its high efficiency and fast switching capabilities.
Overall, the NTTFS5116PLTAG is designed for reliability and performance in power-sensitive applications, balancing size and thermal characteristics for versatile use.
Pinout
The pin count for the NTTFS5116PLTAG is typically 6 pins:
1. Drain (D): This is the pin where the drain current exits the MOSFET.
2. Gate (G): The gate pin is used to control the MOSFET, turning it on or off by applying the appropriate voltage.
3. Source (S): This is the pin where the current enters the MOSFET.
The package might have additional connections for thermal management or grounding purposes. This MOSFET is commonly used in electronic circuits for switching and amplifying signals. Its compact package makes it suitable for use in space-constrained applications. Always refer to the specific datasheet for precise pin configuration and additional specifications.