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NTS4101PT1G
+NomenclatureMOSFET P-CH 20V 1.37A SC70-3
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FabricantSemi - conducteurs
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Pièce fabricant #NTS4101PT1G
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Package SC-70
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En stock1969
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.37A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 120mOhm @ 1A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 9 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 840 pF @ 20 V |
| Power Dissipation (Max) | 329mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-3 (SOT323) |
Présentation
Description
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- Compact Package (SOT-23): Ideal for space-constrained designs.
- Low Gate Drive Voltage (VGS): Compatible with low-voltage control circuits (e.g., 1.8V–5V).
- High Current Handling (up to ~3A): Suitable for switching and load control.
Common uses include power switches, battery protection, and DC-DC converters in portable electronics, IoT devices, and power supplies.
Specs (typical):
- VDS: -20V
- ID: -3.1A
- RDS(on): 50mΩ @ VGS = -4.5V
For detailed performance curves and application notes, refer to the datasheet.
Features
- Voltage Rating: -30V drain-to-source (VDS).
- Current Handling: -4.3A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -3V (VGS(th)).
- Fast Switching: Low gate charge (Qg) for efficient performance.
- Package: SOT-23 (small form factor).
- Applications: Power management, load switching, battery protection.
Compact and efficient, it’s ideal for portable and low-voltage circuits.
Pinout
- Pin Functions:
1. Gate (G): Controls the MOSFET.
2. Source (S): Connects to the power supply.
3. Drain (D): Output to the load.
4. Enable (EN): Active-high logic input to turn the switch ON/OFF.
5. Ground (GND): Reference for EN logic.
- Purpose: Provides low-voltage (1.2V–5.5V) load switching with low on-resistance (RDS(on)), ideal for power management in portable devices.
- Protection: Includes reverse current blocking and thermal shutdown.
Concise and suitable for compact designs.
Manufacturer
ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and discrete components for automotive, industrial, and consumer markets. The company is known for innovation, reliability, and sustainability in semiconductor manufacturing.
The NTS4101PT1G is a P-channel MOSFET, commonly used in power switching applications. ON Semiconductor's components are widely trusted in electronics design.
Application
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in low-voltage applications.
4. Motor Control – Driving small motors in consumer electronics.
5. Automotive Systems – Power distribution and protection circuits.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.
