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NTR4502PT1G
+NomenclatureMOSFET P-CH 30V 1.13A SOT23-3
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FabricantSemi - conducteurs
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Pièce fabricant #NTR4502PT1G
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Package SOT-23-3
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En stock3962
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 1.13A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 200mOhm @ 1.95A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 200 pF @ 15 V |
| Power Dissipation (Max) | 400mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Présentation
Description
Equivalent
1. 2N7002 - A standard N-channel MOSFET with similar voltage and current ratings.
2. BSN20 - Another N-channel MOSFET offering comparable characteristics.
3. Si2302 - A small-signal MOSFET with similar specifications.
4. AO3400 - Provides similar voltage and current ratings.
5. FDV303N - A MOSFET with comparable application use.
When selecting an equivalent, always verify the specific parameters to ensure compatibility with your application.
Features
1. Low On-Resistance: It offers a low RDS(on), enhancing conductivity and reducing power loss.
2. Voltage Range: It operates at a -20V drain-source voltage, making it suitable for low-voltage applications.
3. Current Capacity: The device supports a continuous drain current of up to -3.5A.
4. Package Type: Housed in a compact SOT-23 package, it is ideal for space-constrained designs.
5. Thermal Performance: Efficient heat dissipation allows for reliable operation in varying thermal environments.
6. Applications: Commonly used in power management, load switching, and other portable device circuits.
7. RoHS Compliance: The component is environmentally friendly and adheres to RoHS standards.
These features make the NTR4502PT1G a versatile choice for designers seeking efficient power control in compact electronic layouts.
Pinout
1. Gate (G): This is the control pin for the MOSFET, where a voltage is applied to control the conduction between the drain and source.
2. Source (S): This pin is connected to the source side of the MOSFET. It's typically connected to the ground or a low voltage side in many applications.
3. Drain (D): This pin is connected to the drain side of the MOSFET and is where the current flows out when the MOSFET is in the "on" state.
The NTR4502PT1G is used in various applications for switching and amplifying electronic signals, making it suitable for use in power management and other electronic circuits. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings to ensure proper use in your application.