NTMFS4H01NT1G

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NTMFS4H01NT1G

+Nomenclature

MOSFET N-CH 25V 54A/334A 5DFN

  • FabricantSemi - conducteurs

  • Pièce fabricant #NTMFS4H01NT1G

  • Package SO-8FL-4

  • En stock2713

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain(Id) @ 25°C 54A (Ta), 334A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 0.7mOhm @ 30A, 10V
Vgs(th)(Max) @ Id 2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 85 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 5693 pF @ 12 V
Power Dissipation (Max) 3.2W (Ta), 125W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)

Présentation

Description

The NTMFS4H01NT1G is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: 100 A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and load switches.
- Low Gate Charge (QG): Enhances efficiency in switching circuits.
- Compact Package: DFN5x6 (5x6 mm) for space-constrained designs.
Ideal for automotive, industrial, and computing systems, it balances performance with thermal management. Always refer to the datasheet for detailed specs and application guidelines.

Features

The NTMFS4H01NT1G is a 30V, 100A N-channel MOSFET with key features:
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) @ VGS = 10V, reducing conduction losses.
- High Current Handling: Supports up to 100A continuous drain current.
- Fast Switching: Optimized for high-efficiency power applications.
- Low Gate Charge (Qg): Enhances switching performance.
- AEC-Q101 Qualified: Suitable for automotive applications.
- PowerPAK® SO-8 Package: Compact, thermally efficient design.
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1V).
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.

Pinout

The NTMFS4H01NT1G is a Power MOSFET in a DFN5 (5-pin) package.
Pin Functions:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D1, D2, D3): Three pins connected internally to the drain terminal for lower resistance and better heat dissipation.
4. Source (S): Output/return path for current.
Key Features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- High current handling (up to 100A)
- Low RDS(on) (1.1mΩ typical)
Used in power management, DC-DC converters, and motor control.

Manufacturer

The NTMFS4H01NT1G is manufactured by ON Semiconductor, a leading global supplier of power management, analog, and sensor solutions. ON Semiconductor specializes in energy-efficient technologies for automotive, industrial, and consumer markets. The company is known for its high-performance MOSFETs, like the NTMFS4H01NT1G, which is a power MOSFET designed for efficient switching applications.
ON Semiconductor, founded in 1999 and headquartered in Phoenix, Arizona, serves a broad range of industries with innovative semiconductor solutions.

Application

The NTMFS4H01NT1G is a power MOSFET designed for high-efficiency switching applications. Key application areas include:
- DC-DC Converters: Used in voltage regulation for power supplies.
- Load Switches: Controls power distribution in circuits.
- Motor Drivers: Efficiently drives small motors in automotive and industrial systems.
- Battery Management: Protects and manages power in portable devices and EVs.
- LED Lighting: Enables energy-efficient LED drivers.
Its low on-resistance and fast switching make it ideal for compact, high-performance designs.

Package

The NTMFS4H01NT1G is a Power MOSFET from ON Semiconductor, available in a DFN-5 (5-Pin Dual Flat No-Lead) package. This compact surface-mount package offers efficient thermal performance and a small footprint, suitable for high-density PCB designs. Key dimensions are typically 2.5mm x 2.0mm with a height of 0.8mm. Ideal for power management in portable and space-constrained applications.

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