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NTMFS4H01NT1G
+NomenclatureMOSFET N-CH 25V 54A/334A 5DFN
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FabricantSemi - conducteurs
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Pièce fabricant #NTMFS4H01NT1G
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Package SO-8FL-4
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En stock2713
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain(Id) @ 25°C | 54A (Ta), 334A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 0.7mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 85 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5693 pF @ 12 V |
| Power Dissipation (Max) | 3.2W (Ta), 125W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Présentation
Description
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: 100 A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and load switches.
- Low Gate Charge (QG): Enhances efficiency in switching circuits.
- Compact Package: DFN5x6 (5x6 mm) for space-constrained designs.
Ideal for automotive, industrial, and computing systems, it balances performance with thermal management. Always refer to the datasheet for detailed specs and application guidelines.
Features
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) @ VGS = 10V, reducing conduction losses.
- High Current Handling: Supports up to 100A continuous drain current.
- Fast Switching: Optimized for high-efficiency power applications.
- Low Gate Charge (Qg): Enhances switching performance.
- AEC-Q101 Qualified: Suitable for automotive applications.
- PowerPAK® SO-8 Package: Compact, thermally efficient design.
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1V).
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D1, D2, D3): Three pins connected internally to the drain terminal for lower resistance and better heat dissipation.
4. Source (S): Output/return path for current.
Key Features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- High current handling (up to 100A)
- Low RDS(on) (1.1mΩ typical)
Used in power management, DC-DC converters, and motor control.
Manufacturer
ON Semiconductor, founded in 1999 and headquartered in Phoenix, Arizona, serves a broad range of industries with innovative semiconductor solutions.
Application
- DC-DC Converters: Used in voltage regulation for power supplies.
- Load Switches: Controls power distribution in circuits.
- Motor Drivers: Efficiently drives small motors in automotive and industrial systems.
- Battery Management: Protects and manages power in portable devices and EVs.
- LED Lighting: Enables energy-efficient LED drivers.
Its low on-resistance and fast switching make it ideal for compact, high-performance designs.