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NTMFS4C06NT1G
+NomenclatureMOSFET N-CH 30V 11A/69A 5DFN
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FabricantSemi - conducteurs
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Pièce fabricant #NTMFS4C06NT1G
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Package SO-8FL
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En stock6637
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Ta), 69A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1683 pF @ 15 V |
| Power Dissipation (Max) | 770mW (Ta), 30.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Présentation
Description
The introduction to such a component would involve discussing its main features, specifications, and potential applications. Key elements might include its electrical characteristics (such as voltage and current ratings), physical dimensions, and compatibility with other devices. Additionally, understanding the manufacturer's reputation and availability of technical support or documentation can also be important for engineers and developers looking to integrate the component into their projects.
For precise details, it would be essential to refer to the datasheet or technical documentation provided by the manufacturer, as this would give an in-depth explanation of the component's capabilities and limitations.
Equivalent
1. Infineon: BSC010N04LS
2. Vishay: SiR472DP
3. STMicroelectronics: STL40N4LLF6
4. ROHM: RQ3E150GN
Ensure to verify the specifications, like Vds, Id, Rds(on), and package, to confirm compatibility in your application.
Features
1. N-Channel MOSFET: This device is an N-channel MOSFET, suitable for high-speed switching applications.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) capability, which should be checked in the specific datasheet for precise values.
3. Low On-Resistance: The device is designed to have a low on-resistance (R_DS(on)), which minimizes power loss and ensures efficient operation.
4. Package Type: It is available in a compact surface-mount package, often a WDFN or similar, which is beneficial for space-constrained applications.
5. Thermal Performance: The package and design provide good thermal performance, enabling higher power handling and reliability.
6. Applications: Commonly used in power management, motor control, load switching, and DC-DC converters.
For precise specifications, referring to the manufacturer's datasheet is recommended.
Pinout
The main functions of the pins in this package are:
1. Gate (G): This pin controls the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is where the majority of the voltage drop occurs. In the SO-8FL package, multiple pins might be internally connected to the drain for power handling purposes.
3. Source (S): This pin is the return path for the current flowing through the MOSFET.
In practice, some pins in the package may be tied together and are often used to enhance current handling capabilities by paralleling them internally or externally on a PCB. The specific datasheet should be consulted for detailed pin configuration and recommended usage.
Manufacturer
Application
1. Power Supply Circuits: Facilitates efficient switching and conversion in DC-DC converters and voltage regulators.
2. Motor Control: Provides efficient control in motor drive applications, enhancing performance in automotive and industrial systems.
3. Load Switching: Suitable for high-speed switching in load management and circuit protection.
4. Battery Management: Utilized in battery protection circuits for consumer electronics and electric vehicles.
5. Lighting Systems: Efficiently manages power in LED drivers and other lighting control applications.
These applications benefit from its low on-resistance and fast switching capabilities.