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MOSFET 2P-CH 20V 4.8A 8SOIC
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FabricantSemi - conducteurs
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Pièce fabricant #NTMD6P02R2SG
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Fiche technique NTMD6P02R2SG DataSheet
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Package SOIC-8
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En stock6487
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Part Status | Obsolete |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 4.8A |
| Rds On(Max) @ Id Vgs | 33mOhm @ 6.2A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 1700pF @ 16V |
| Power - Max | 750mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
