NTJD4158CT1G

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NTJD4158CT1G

+Nomenclature

MOSFET N/P-CH 30V/20V SOT363

  • FabricantSemi - conducteurs

  • Pièce fabricant #NTJD4158CT1G

  • Package SC-70-6

  • En stock2739

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V, 20V
Current-ContinuousDrain(Id)@25°C 250mA, 880mA
RdsOn(Max)@IdVgs 1.5Ohm @ 10mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 1.5nC @ 5V
InputCapacitance(Ciss)(Max)@Vds 33pF @ 5V
Power-Max 270mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Présentation

Description

The NTJD4158CT1G is a dual N-channel MOSFET designed for applications requiring low power consumption and high efficiency. Manufactured by ON Semiconductor, it integrates two MOSFETs into a compact SOT-563 package, making it ideal for space-constrained environments such as portable electronics. Key features include a low on-resistance, which minimizes power loss and heat generation, and fast switching capabilities, enhancing performance in high-speed applications. Its maximum drain-source voltage is typically around 20V, with a continuous drain current rating of approximately 0.7A per channel, suitable for low to medium power applications. The device is RoHS-compliant, reflecting its environmentally friendly design. Its small size and efficient performance make it a versatile choice for designers focused on achieving energy-efficient solutions in compact form factors, such as smartphones, tablets, and other portable devices. Additionally, its reliability and robust construction ensure longevity and stability in various electronic circuits.

Equivalent

The NTJD4158CT1G is a dual N-channel MOSFET chip. Equivalent products include:
1. 2N7002 - A commonly used N-channel MOSFET.
2. BSN20 - Offers similar performance for switching applications.
3. FDV301N - Suitable for low power switching tasks.
4. BSS138 - Used in low voltage applications, often interchangeable in circuits.
5. IRLML6401 - A dual N-channel MOSFET with comparable specifications.
Always verify the specifications and pin configurations to ensure full compatibility.

Features

The NTJD4158CT1G is a dual N-channel MOSFET designed for various electronic applications. Key features include:
1. Dual N-Channel Configuration: This device has two N-channel MOSFETs in a single package, allowing for efficient design in circuits requiring multiple transistors.

2. Compact Package: It is housed in a small and space-efficient SOT-563 package, making it suitable for compact and portable devices.
3. Low On-Resistance: Features low on-state resistance, which helps in reducing power loss and increasing the efficiency of power management in circuits.
4. Fast Switching: Designed for high-speed operation, it is suitable for applications that require fast switching times.
5. Logic Level Gate Drive: It can be driven by lower voltage levels, which makes it compatible with low-voltage logic circuits.
6. Protection Features: Incorporates ESD protection and is designed to handle high levels of electrical stress without damage.
7. Applications: Suitable for use in power management, load switching, and signal processing in consumer electronics, automotive, and industrial applications.
These features make the NTJD4158CT1G a versatile component for modern electronic designs.

Pinout

The NTJD4158CT1G is a dual NPN and PNP bipolar junction transistor (BJT) in a compact 6-pin SC-88/SOT-363 package. It includes one NPN transistor and one PNP transistor designed for general-purpose amplification and switching applications. The pin configuration is as follows:
1. Pin 1 (Emitter of Q1 - NPN)
2. Pin 2 (Base of Q1 - NPN)
3. Pin 3 (Collector of Q2 - PNP)
4. Pin 4 (Base of Q2 - PNP)
5. Pin 5 (Emitter of Q2 - PNP)
6. Pin 6 (Collector of Q1 - NPN)
The compact 6-pin design allows for efficient use of board space while supporting simultaneous use of both NPN and PNP transistors, which is beneficial in creating complementary circuits or drivers in small electronic applications.

Manufacturer

The NTJD4158CT1G is manufactured by ON Semiconductor, which is now officially known as onsemi. Onsemi is a leading semiconductor manufacturer that specializes in intelligent power and sensing technologies. The company provides a broad variety of products including power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices. These products are utilized across various sectors, such as automotive, communications, computing, consumer electronics, industrial, medical, and aerospace/defense industries. Onsemi is recognized for its focus on energy-efficient innovations, contributing to sustainable solutions and helping to reduce global energy use.

Application

The NTJD4158CT1G is a dual N-channel MOSFET commonly used in various applications such as power management, load switching, and high-speed switching circuits. It is suitable for use in DC-DC converters, battery management systems, and portable electronics due to its low on-resistance and fast switching capabilities. Additionally, it can be found in applications involving motor controls, LED drivers, and other systems requiring efficient power conversion and management. Its compact package makes it ideal for space-constrained applications in consumer electronics and telecommunications.

Package

The NTJD4158CT1G is a dual N-channel MOSFET from ON Semiconductor, and it is typically housed in a TSOP-6 package, also known as SOT-23-6. This package is small, making it suitable for compact electronic applications.

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