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NTJD4105CT1G
+NomenclatureMOSFET N/P-CH 20V/8V SOT-363
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FabricantSemi - conducteurs
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Pièce fabricant #NTJD4105CT1G
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Package SOT-363
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En stock4611
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V, 8V |
| Current-ContinuousDrain(Id)@25°C | 630mA, 775mA |
| RdsOn(Max)@IdVgs | 375mOhm @ 630mA, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 46pF @ 20V |
| Power-Max | 270mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Présentation
Description
Key Features:
- Dual N-Channel: Contains two N-channel MOSFETs in a single package, allowing for more compact circuit design.
- Low On-Resistance: Offers efficient conductivity when in an 'on' state, reducing power loss and heat generation.
- Compact Package: Typically housed in a small SOT-563 package, saving space on circuit boards.
- High-Speed Switching: Capable of fast switching speeds, suitable for high-frequency applications.
- Low Voltage Operation: Can operate efficiently at low voltages, making it suitable for modern low-power electronics.
Applications can include load switching, DC-DC converters, and analog switching. Its reliability and efficiency make it a versatile choice for engineers and designers in the electronics field.
Equivalent
1. FDMA1027PZ by ON Semiconductor: Similar specifications for low-voltage applications.
2. Si1022X by Vishay: Compatible in terms of function and package.
3. BSS138 by Nexperia: Though not dual, it’s often used in similar applications.
4. 2N7002 by Fairchild Semiconductor: Another commonly used N-channel MOSFET.
Always verify electrical characteristics to ensure compatibility for your specific application.
Features
1. Dual N-Channel MOSFET: Contains two N-channel MOSFETs in a single package, optimizing space and enhancing performance in compact designs.
2. Low On-Resistance: Exhibits low R_DS(on) values which reduce power dissipation and improve efficiency, crucial for battery-powered and heat-sensitive applications.
3. Compact Package: Available in a small SOT-563 package, making it suitable for space-constrained applications.
4. Fast Switching Speed: Capable of fast switching, which is essential for high-frequency applications and reducing transition losses.
5. Voltage Range: Supports a maximum drain-source voltage (V_DS) of 20V, suitable for various low-voltage applications.
6. Current Handling: Capable of handling a continuous drain current, making it suitable for moderate power loads.
These features make the NTJD4105CT1G ideal for use in consumer electronics, portable devices, and other applications where space, efficiency, and performance are critical.
Pinout
Here is a brief description of its pin configuration:
1. Pin 1 (Gate 1) - Controls the first N-channel MOSFET.
2. Pin 2 (Source 1) - Source terminal for the first N-channel MOSFET.
3. Pin 3 (Drain 2) - Drain terminal for the second N-channel MOSFET.
4. Pin 4 (Gate 2) - Controls the second N-channel MOSFET.
5. Pin 5 (Source 2) - Source terminal for the second N-channel MOSFET.
6. Pin 6 (Drain 1) - Drain terminal for the first N-channel MOSFET.
This component is typically used in battery-powered applications, DC-DC converters, and load switching due to its small footprint and efficient operation.