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NTHD3101FT1G
+NomenclatureMOSFET P-CH 20V 3.2A CHIPFET
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FabricantSemi - conducteurs
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Pièce fabricant #NTHD3101FT1G
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En stock5402
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 3.2A (Tj) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 80mOhm @ 3.2A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 7.4 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 680 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ChipFET™ |
Présentation
Description
The NTHD3101FT1G is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Manufactured by ON Semiconductor, it is part of their extensive lineup of power transistors, specifically tailored for small-signal switching. This device is known for its compact package, typically the SOT-23, which makes it suitable for space-constrained applications.
Key features of the NTHD3101FT1G include a low drain-source on-resistance (R_DS(on)), which promotes efficient power management and reduces heat generation. It also supports fast switching speeds, making it ideal for applications in power management, load switching, and other general-purpose switching tasks. The device operates with a maximum drain-source voltage (V_DS) of around 20V and a continuous drain current (I_D) of around 1.5A.
Overall, the NTHD3101FT1G is a versatile component for designers seeking reliable performance in low to moderate power applications, with benefits such as energy efficiency and compact form factor.
Key features of the NTHD3101FT1G include a low drain-source on-resistance (R_DS(on)), which promotes efficient power management and reduces heat generation. It also supports fast switching speeds, making it ideal for applications in power management, load switching, and other general-purpose switching tasks. The device operates with a maximum drain-source voltage (V_DS) of around 20V and a continuous drain current (I_D) of around 1.5A.
Overall, the NTHD3101FT1G is a versatile component for designers seeking reliable performance in low to moderate power applications, with benefits such as energy efficiency and compact form factor.
Equivalent
The NTHD3101FT1G is a dual N-channel MOSFET commonly used in switching applications. Equivalent products include:
1. DMN2300U from Diodes Incorporated
2. Si1902DL from Vishay
3. FDN5618P from ON Semiconductor
4. BSS138 from Infineon Technologies
These equivalents have similar electrical characteristics and can be considered as alternatives, but always compare datasheets to ensure compatibility with your specific application requirements.
1. DMN2300U from Diodes Incorporated
2. Si1902DL from Vishay
3. FDN5618P from ON Semiconductor
4. BSS138 from Infineon Technologies
These equivalents have similar electrical characteristics and can be considered as alternatives, but always compare datasheets to ensure compatibility with your specific application requirements.
Features
The NTHD3101FT1G is a P-Channel MOSFET produced by ON Semiconductor. Key features include:
1. Voltage and Current Ratings: It supports a drain-source voltage (V_ds) of -20V and a continuous drain current (I_d) of -3.1A, making it suitable for low voltage applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance (R_ds(on)) of approximately 82 mΩ at V_gs = -4.5V, ensuring efficient performance with minimal power loss.
3. Compact Package: Offered in a compact SOT-23 package, it is ideal for space-constrained applications.
4. Enhanced Switching Speed: The device provides fast switching capabilities, which is beneficial for high-speed circuits.
5. Thermal Efficiency: It offers good thermal performance, making it reliable for various operating conditions.
6. Applications: Commonly used in power management, load switching, and battery-powered applications due to its efficient power handling.
These features make the NTHD3101FT1G MOSFET a versatile component in electronics requiring efficient power control and management.
1. Voltage and Current Ratings: It supports a drain-source voltage (V_ds) of -20V and a continuous drain current (I_d) of -3.1A, making it suitable for low voltage applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance (R_ds(on)) of approximately 82 mΩ at V_gs = -4.5V, ensuring efficient performance with minimal power loss.
3. Compact Package: Offered in a compact SOT-23 package, it is ideal for space-constrained applications.
4. Enhanced Switching Speed: The device provides fast switching capabilities, which is beneficial for high-speed circuits.
5. Thermal Efficiency: It offers good thermal performance, making it reliable for various operating conditions.
6. Applications: Commonly used in power management, load switching, and battery-powered applications due to its efficient power handling.
These features make the NTHD3101FT1G MOSFET a versatile component in electronics requiring efficient power control and management.
Pinout
The NTHD3101FT1G is a dual N-channel MOSFET commonly used in electronic applications for switching and amplification purposes. It typically comes in a small SOT-563 package, which has a total of 6 pins. Here is a brief overview of its pin functions:
1. Pin 1 (Gate 1): Controls the first N-channel MOSFET.
2. Pin 2 (Source 1): Source terminal for the first N-channel MOSFET.
3. Pin 3 (Source 2): Source terminal for the second N-channel MOSFET.
4. Pin 4 (Gate 2): Controls the second N-channel MOSFET.
5. Pin 5 (Drain 2): Drain terminal for the second N-channel MOSFET.
6. Pin 6 (Drain 1): Drain terminal for the first N-channel MOSFET.
The NTHD3101FT1G is designed for low voltage, high-speed switching applications, and it offers features like low on-state resistance and fast switching speed, making it suitable for applications in portable devices or other compact electronics.
1. Pin 1 (Gate 1): Controls the first N-channel MOSFET.
2. Pin 2 (Source 1): Source terminal for the first N-channel MOSFET.
3. Pin 3 (Source 2): Source terminal for the second N-channel MOSFET.
4. Pin 4 (Gate 2): Controls the second N-channel MOSFET.
5. Pin 5 (Drain 2): Drain terminal for the second N-channel MOSFET.
6. Pin 6 (Drain 1): Drain terminal for the first N-channel MOSFET.
The NTHD3101FT1G is designed for low voltage, high-speed switching applications, and it offers features like low on-state resistance and fast switching speed, making it suitable for applications in portable devices or other compact electronics.
Manufacturer
The NTHD3101FT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a broad range of performance power and signal management, logic, discrete, and custom devices. These components are used in various applications in the automotive, industrial, cloud, and IoT sectors to improve energy efficiency and enable new technologies. The company is recognized for its innovative solutions and comprehensive portfolio of semiconductor products.
Application
The NTHD3101FT1G is a dual N-channel MOSFET designed for low power applications. Its key features include a low threshold voltage, low on-resistance, and compact packaging, making it suitable for a variety of applications. Common application areas include:
1. Load Switching: Used in battery-powered devices for efficient power management.
2. DC-DC Converters: Effective in power conversion circuits due to its low on-resistance.
3. Signal Switching: Suitable for analog and digital signal switching applications.
4. Portable Electronics: Ideal for space-constrained applications in mobile phones, tablets, and wearable devices.
5. Consumer Electronics: Utilized in electronic toys, cameras, and other small gadgets for efficient circuit control.
1. Load Switching: Used in battery-powered devices for efficient power management.
2. DC-DC Converters: Effective in power conversion circuits due to its low on-resistance.
3. Signal Switching: Suitable for analog and digital signal switching applications.
4. Portable Electronics: Ideal for space-constrained applications in mobile phones, tablets, and wearable devices.
5. Consumer Electronics: Utilized in electronic toys, cameras, and other small gadgets for efficient circuit control.
Package
The NTHD3101FT1G is a dual N-channel MOSFET. Its package type is SOT-563, which is a small, surface-mount package designed for compact electronic applications.
