NTH4L028N170M1

Images à titre indicatif uniquement

NTH4L028N170M1

+Nomenclature

SIC MOSFET 1700 V 28 MOHM M1 SER

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 40mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 800 V
Power Dissipation (Max) 535W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Product Number NTH4L02

Présentation

Description

"NTH4L028N170M1" appears to be a code or identifier, possibly related to a specific data series, product, or technical component. Without additional context, it is difficult to provide a detailed introduction. However, in general, such codes are often used in databases, inventories, or catalog systems to uniquely identify items.
For instance, in the context of economic data, a code like this could represent a specific dataset or economic indicator from a database like the Federal Reserve Economic Data (FRED). In manufacturing or logistics, it might denote a particular part or product specification.
To understand the significance of "NTH4L028N170M1," it would be essential to know the system or context it belongs to, such as a specific database, organization, or industry. If you have access to the source or database where this code is used, consulting that resource can provide more specific information regarding its meaning and application.

Equivalent

The NTH4L028N170M1 is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power switching applications. Equivalent products would typically be other N-channel MOSFETs with similar voltage, current, and package specifications. Possible equivalents might include the Infineon IPB180N10S4L, Vishay SiR178DP, or ON Semiconductor NVMFS5C646NL. Always verify specific parameters like voltage, current, Rds(on), and thermal characteristics to ensure compatibility with your design needs.

Pinout

The NTH4L028N170M1 is a power MOSFET. Specifically, it is an N-channel MOSFET designed for applications that require high efficiency and fast switching, such as power management in computing and industrial equipment. However, specific details about the pin count and configuration for this particular part number require consulting the datasheet from the manufacturer or an authorized distributor, as they provide the most accurate and detailed information about the component. Typically, MOSFETs like the NTH4L028N170M1 might have a standard TO-220 or TO-247 package, which includes three pins: Gate (G), Drain (D), and Source (S). The exact pin configuration and count should be verified from the official documentation to ensure proper usage in your application.

Manufacturer

The manufacturer of the NTH4L028N170M1 is ON Semiconductor, now known as onsemi. Onsemi is a semiconductor manufacturing company that provides a wide range of energy-efficient power and sensing solutions. The company caters to various markets, including automotive, industrial, cloud power, and Internet of Things (IoT). Onsemi is recognized for its focus on innovation, providing key components and technologies essential for modern electronic devices and systems. It offers products such as power management integrated circuits (ICs), signal management, logic, discrete, and custom devices.

Application

The NTH4L028N170M1 is a power MOSFET, typically used in applications requiring high efficiency and fast switching capabilities. Key application areas include:
1. Power Supply Units: Used in AC-DC and DC-DC converters for efficient power management.
2. Motor Drives: Employed in industrial and consumer motor control systems.
3. Automotive Systems: Utilized in electric and hybrid vehicle power systems.
4. Renewable Energy: Integrated into solar inverters and wind turbine converters.
5. Telecommunications: Used in power amplification and power regulation circuits.
These applications benefit from the MOSFET’s low on-resistance and high-speed switching characteristics, enhancing efficiency and performance.

Package

The package type of NTH4L028N170M1 is a TO-247, which is a standard transistor outline package commonly used for power semiconductors. TO-247 packages typically provide efficient heat dissipation, making them suitable for high-power applications.

Produits liés à NTH4L028N170M1