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NTF2955T1G
+NomenclatureMOSFET P-CH 60V 1.7A SOT223
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FabricantSemi - conducteurs
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Pièce fabricant #NTF2955T1G
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Package SOT-223-4
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En stock6023
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 185mOhm @ 2.4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 14.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 492 pF @ 25 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) |
Présentation
Description
The NTF2955T1G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is designed to handle medium power levels and is suitable for various applications, including power management, load switching, and DC-DC conversion.
Key features of the NTF2955T1G include:
1. Voltage and Current Ratings: It typically operates at a drain-source voltage (V_DS) of up to 60V and can handle a continuous drain current (I_D) of around 12A, making it suitable for medium power applications.
2. Low On-Resistance: The device offers a low on-state resistance, which enhances efficiency by reducing power loss during operation.
3. Package Type: It is available in surface-mount packages, such as the SOT-223, which allows for compact circuit designs.
4. Thermal Performance: The device is designed to efficiently dissipate heat, ensuring reliability and stability in thermal management.
Overall, the NTF2955T1G is a versatile component widely used in various electronic applications requiring efficient switching and amplification.
Key features of the NTF2955T1G include:
1. Voltage and Current Ratings: It typically operates at a drain-source voltage (V_DS) of up to 60V and can handle a continuous drain current (I_D) of around 12A, making it suitable for medium power applications.
2. Low On-Resistance: The device offers a low on-state resistance, which enhances efficiency by reducing power loss during operation.
3. Package Type: It is available in surface-mount packages, such as the SOT-223, which allows for compact circuit designs.
4. Thermal Performance: The device is designed to efficiently dissipate heat, ensuring reliability and stability in thermal management.
Overall, the NTF2955T1G is a versatile component widely used in various electronic applications requiring efficient switching and amplification.
Equivalent
The NTF2955T1G is a P-channel MOSFET. Equivalent products include:
1. IRF9540 by Infineon Technologies.
2. FQP27P06 by ON Semiconductor.
3. STP55PF06 by STMicroelectronics.
4. FDP7030BL by Fairchild Semiconductor.
Ensure compatibility in terms of voltage, current, and package before making substitutions. Always refer to datasheets for exact specifications.
1. IRF9540 by Infineon Technologies.
2. FQP27P06 by ON Semiconductor.
3. STP55PF06 by STMicroelectronics.
4. FDP7030BL by Fairchild Semiconductor.
Ensure compatibility in terms of voltage, current, and package before making substitutions. Always refer to datasheets for exact specifications.
Features
The NTF2955T1G is a P-channel power MOSFET designed for use in various applications requiring high-speed switching and efficiency. Key features include:
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of -12A, making it suitable for medium power applications.
2. R_DS(on): It has a low on-state resistance, ensuring minimal power loss when the MOSFET is in the conducting state.
3. Package Type: Available in a compact SOT-223 surface mount package, which is ideal for space-constrained designs.
4. Thermal Performance: The package provides efficient heat dissipation, enhancing the device's reliability and performance under load.
5. Applications: Commonly used in DC-DC converters, power management systems, and load switching applications.
6. Production and Reliability: Manufactured by ON Semiconductor, ensuring quality and consistency in performance.
These features make the NTF2955T1G a versatile and efficient choice for various electronic applications involving power management and control.
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of -12A, making it suitable for medium power applications.
2. R_DS(on): It has a low on-state resistance, ensuring minimal power loss when the MOSFET is in the conducting state.
3. Package Type: Available in a compact SOT-223 surface mount package, which is ideal for space-constrained designs.
4. Thermal Performance: The package provides efficient heat dissipation, enhancing the device's reliability and performance under load.
5. Applications: Commonly used in DC-DC converters, power management systems, and load switching applications.
6. Production and Reliability: Manufactured by ON Semiconductor, ensuring quality and consistency in performance.
These features make the NTF2955T1G a versatile and efficient choice for various electronic applications involving power management and control.
Pinout
The NTF2955T1G is a P-channel MOSFET transistor. It typically comes in a SOT-223 package. This device is designed for use in low-power applications and is characterized by its ability to switch high currents with a low ON-state resistance.
Pin Count and Functions:
1. Pin 1 (Gate): This is the control terminal for the MOSFET. A voltage applied here regulates the current flow between the source and the drain.
2. Pin 2 (Drain): The primary current-carrying terminal. It is the terminal through which the load current enters the device.
3. Pin 3 (Source): The terminal through which the load current exits the device. It is typically connected to ground in P-channel MOSFET applications.
4. Pin 4 (Tab/Drain): This is connected internally to the drain and provides a thermal path for heat dissipation.
The NTF2955T1G is used in various applications, including power management, load switching, and in systems requiring efficient power usage.
Pin Count and Functions:
1. Pin 1 (Gate): This is the control terminal for the MOSFET. A voltage applied here regulates the current flow between the source and the drain.
2. Pin 2 (Drain): The primary current-carrying terminal. It is the terminal through which the load current enters the device.
3. Pin 3 (Source): The terminal through which the load current exits the device. It is typically connected to ground in P-channel MOSFET applications.
4. Pin 4 (Tab/Drain): This is connected internally to the drain and provides a thermal path for heat dissipation.
The NTF2955T1G is used in various applications, including power management, load switching, and in systems requiring efficient power usage.
Manufacturer
The NTF2955T1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a global company that specializes in intelligent technology solutions. It provides a broad range of products including semiconductors, power and signal management, logic, discrete, and custom devices for various applications. The company focuses on sectors such as automotive, industrial, cloud power, and IoT, aiming to enable energy-efficient innovations. Onsemi is recognized for its contributions to sustainable technology and its commitment to providing solutions that reduce global energy use.
Application
The NTF2955T1G is a P-channel MOSFET designed for various applications, primarily in power management and switching. It is commonly used in power supply circuits, load switching, and battery-powered devices due to its efficiency in handling low voltage and low current. Its compact SOT-223 package makes it suitable for applications where space is limited. Additionally, it can be used in automotive systems, industrial equipment, and portable consumer electronics to manage power distribution and protect against overcurrent conditions. Its robust thermal characteristics and reliable performance make it a versatile choice for designers seeking efficient power control solutions.
Package
The NTF2955T1G is a P-channel MOSFET from ON Semiconductor. It is typically available in a SOT-223 package type, which is a surface-mount package designed for efficient heat dissipation and compactness in electronic circuits.
