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NTA4153NT1G
+NomenclatureMOSFET N-CH 20V 915MA SC75
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FabricantSemi - conducteurs
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Pièce fabricant #NTA4153NT1G
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Package SC-75
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En stock5154
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 915mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 230mOhm @ 600mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.82 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| Input Capacitance(Ciss)(Max) @ Vds | 110 pF @ 16 V |
| Power Dissipation (Max) | 300mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-75, SOT-416 |
Présentation
Description
The NTA4153NT1G is a small-signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplifying applications. Manufactured by ON Semiconductor, this MOSFET is part of the N-channel enhancement mode family and is notable for its compact SOT-23 package, making it suitable for space-constrained applications.
Key features of the NTA4153NT1G include a low gate threshold voltage and a low on-resistance, which contribute to efficient performance and reduced power loss. It is capable of handling a continuous drain current and supports a maximum drain-source voltage of 20V, making it suitable for low to moderate power applications.
Typical applications for the NTA4153NT1G include power management functions in portable devices, load switching, and general-purpose switching circuits. Its small size and efficient electrical characteristics make it a popular choice for designers looking to optimize space and performance in electronic products.
Key features of the NTA4153NT1G include a low gate threshold voltage and a low on-resistance, which contribute to efficient performance and reduced power loss. It is capable of handling a continuous drain current and supports a maximum drain-source voltage of 20V, making it suitable for low to moderate power applications.
Typical applications for the NTA4153NT1G include power management functions in portable devices, load switching, and general-purpose switching circuits. Its small size and efficient electrical characteristics make it a popular choice for designers looking to optimize space and performance in electronic products.
Equivalent
The NTA4153NT1G is a dual N-channel MOSFET commonly used for switching applications. Equivalent products include:
1. AO3401Aby Alpha & Omega Semiconductor
2. BSS138 by Infineon Technologies
3. Si2302 by Vishay Siliconix
4. PMV16XN by NXP Semiconductors
These equivalents vary in some specifications, so ensure compatibility with your specific application requirements before substituting.
1. AO3401Aby Alpha & Omega Semiconductor
2. BSS138 by Infineon Technologies
3. Si2302 by Vishay Siliconix
4. PMV16XN by NXP Semiconductors
These equivalents vary in some specifications, so ensure compatibility with your specific application requirements before substituting.
Features
The NTA4153NT1G is a NPN bipolar junction transistor (BJT) commonly used in amplification and switching applications. Key features include:
1. Package Type: It is encapsulated in a compact SOT-23 surface-mount package, making it suitable for space-constrained applications.
2. High Current Gain: The device offers a high current gain (hFE), which is essential for efficient amplification processes.
3. Collector-Emitter Voltage: It supports a maximum collector-emitter voltage of 40V, allowing it to work effectively in moderate voltage applications.
4. Collector Current: The transistor is capable of handling a maximum collector current of 1A, enabling it to drive moderate loads.
5. Low Saturation Voltage: It features a low collector-emitter saturation voltage, which minimizes power loss and enhances efficiency during operation.
6. Thermal Management: The design supports efficient heat dissipation, important for maintaining performance and reliability.
7. RoHS Compliant: It adheres to environmental regulations, being free of hazardous substances.
These features make the NTA4153NT1G suitable for applications in portable electronics, signal amplification, and general-purpose switching.
1. Package Type: It is encapsulated in a compact SOT-23 surface-mount package, making it suitable for space-constrained applications.
2. High Current Gain: The device offers a high current gain (hFE), which is essential for efficient amplification processes.
3. Collector-Emitter Voltage: It supports a maximum collector-emitter voltage of 40V, allowing it to work effectively in moderate voltage applications.
4. Collector Current: The transistor is capable of handling a maximum collector current of 1A, enabling it to drive moderate loads.
5. Low Saturation Voltage: It features a low collector-emitter saturation voltage, which minimizes power loss and enhances efficiency during operation.
6. Thermal Management: The design supports efficient heat dissipation, important for maintaining performance and reliability.
7. RoHS Compliant: It adheres to environmental regulations, being free of hazardous substances.
These features make the NTA4153NT1G suitable for applications in portable electronics, signal amplification, and general-purpose switching.
Pinout
The NTA4153NT1G is a dual P-Channel MOSFET. It typically comes in a 6-pin surface-mount package configuration known as SOT-563. The primary function of this component is to serve as a switch or amplifier in electronic circuits, offering low on-resistance and high-speed switching performance.
Here are the basic pin functions for a dual P-Channel MOSFET like the NTA4153NT1G:
1. Gate 1 (G1): Controls the first MOSFET channel.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET channel.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
The dual-channel configuration allows it to handle two separate loads or signals, making it versatile for various applications in power management and signal switching. Note that specific configurations can vary based on manufacturer datasheets, so always refer to the official documentation for precise details.
Here are the basic pin functions for a dual P-Channel MOSFET like the NTA4153NT1G:
1. Gate 1 (G1): Controls the first MOSFET channel.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET channel.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
The dual-channel configuration allows it to handle two separate loads or signals, making it versatile for various applications in power management and signal switching. Note that specific configurations can vary based on manufacturer datasheets, so always refer to the official documentation for precise details.
Manufacturer
The NTA4153NT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading global supplier of semiconductor-based solutions. The company focuses on energy-efficient electronics and provides a broad array of products, including sensors, power management devices, and connectivity solutions. Onsemi serves various markets, including automotive, industrial, cloud power, and IoT, contributing to advancements in technology and efficiency.
Application
The NTA4153NT1G is a dual N-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Switching Circuits: Utilized in DC-DC converters and power management systems for efficient switching.
2. Load Switching: Suitable for controlling small motors, relays, and LEDs.
3. Signal Processing: Employed in audio and RF signal processing circuits.
4. Battery Management: Used in battery protection circuits and charging systems.
5. Consumer Electronics: Integrated into devices like smartphones, tablets, and laptops for power regulation.
6. Automotive: Incorporated in automotive electronics for control systems.
Its compact size and efficient power handling make it versatile for space-constrained applications.
1. Switching Circuits: Utilized in DC-DC converters and power management systems for efficient switching.
2. Load Switching: Suitable for controlling small motors, relays, and LEDs.
3. Signal Processing: Employed in audio and RF signal processing circuits.
4. Battery Management: Used in battery protection circuits and charging systems.
5. Consumer Electronics: Integrated into devices like smartphones, tablets, and laptops for power regulation.
6. Automotive: Incorporated in automotive electronics for control systems.
Its compact size and efficient power handling make it versatile for space-constrained applications.
Package
The NTA4153NT1G is packaged in a SOT-23 (Small Outline Transistor) configuration, which is a three-lead surface-mount package. This type of packaging is commonly used for small, low-power devices and is suitable for high-density PCB layouts.
