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NT5CB64M16GP-EK
+Nomenclature1.425V~1.575V 1Gbit 933MHz DDR3 SDRAM VFBGA-96 Memory (ICs) RoHS
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FabricantTechnologie en Asie du Sud
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Pièce fabricant #NT5CB64M16GP-EK
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Fiche technique NT5CB64M16GP-EK DataSheet
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En stock20378
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Spécifications
| Attribut | Valeur |
| Packaging | VFBGA-96 |
| Clock Frequency | 933MHz |
| Memory Format | DDR3 SDRAM |
| Memory Size | 1Gbit |
| Operating temperature | 0℃~+95℃ |
| Voltage - Supply | 1.425V~1.575V |
Présentation
Description
Equivalent
1. Micron MT41K64M16TW-107: A similar DDR3 DRAM option with comparable density and speed.
2. Samsung K4B4G1646D-BCK0: Another DDR3 memory chip offering similar specifications.
3. Hynix H5TQ2G83DFR: A DDR3 SDRAM with similar performance metrics.
4. Elpida EDJ2116CBBG: Offers equivalent DDR3 memory specifications.
These alternatives match the NT5CB64M16GP-EK in terms of functionality and performance.
Features
1. Memory Capacity & Configuration: The module has a capacity of 1 Gigabit, organized as 64M x 16 bits.
2. Data Rate: Supports data rates up to 1600 Mbps, making it suitable for high-speed data processing applications.
3. Voltage: Operates at a low voltage of 1.35V, ensuring reduced power consumption and enhanced energy efficiency.
4. CAS Latency: Offers a range of CAS latencies from 5 to 11, providing flexibility in performance tuning based on the application requirements.
5. Package Type: Comes in a compact 96-ball FBGA (Fine-pitch Ball Grid Array) package, which facilitates efficient heat dissipation and reliable connectivity.
6. Temperature Range: Supports standard operating temperatures, making it versatile for various environments.
7. Compatibility: Designed to be compatible with a wide range of processors and systems, ideal for use in personal computers, servers, and embedded systems.
These features make the NT5CB64M16GP-EK an excellent choice for those seeking a balance of performance, energy efficiency, and reliability in memory solutions.
Pinout
1. Data Pins (DQ): Used for input/output of data.
2. Address Pins (A): Used to specify the address for read/write operations.
3. Bank Address Pins (BA): Used to select the memory bank.
4. Control Pins: Include signals like CAS#, RAS#, WE# for controlling read/write operations.
5. Clock Pins (CK, CK#): Used for clock signals.
6. Power and Ground Pins (VDD, VSS): Provide power supply and grounding.
7. Data Strobe Pins (DQS, DQS#): Used to capture data signals.
8. Chip Select Pins (CS#): Enable or disable the chip.
9. ODT (On-Die Termination): Used for signal termination.
These pins collectively enable the DRAM to perform efficient data storage and retrieval operations in computing applications.
Manufacturer
Application
1. Consumer Electronics: Used in devices like smart TVs, gaming consoles, and set-top boxes for efficient data processing and storage.
2. Computing: Integrated into laptops, desktops, and servers to enhance performance, allowing for faster data access and multitasking.
3. Networking Equipment: Utilized in routers, switches, and network storage devices for reliable and fast data transfer.
4. Industrial Applications: Employed in automation systems and industrial computers requiring robust memory solutions for operational efficiency.
5. Embedded Systems: Supports various applications in automotive electronics, medical devices, and IoT devices, providing dependable performance in constrained environments.
Package
Frequently Asked Questions
Q: What is the memory density of the NT5CB64M16GP-EK?
A: It offers a 1Gbit memory density, organized as 64M words x 16 bits (64M x16).
Q: What is the maximum operating frequency of this DDR3 SDRAM?
A: The device supports a clock frequency of up to 933MHz, enabling high-speed data transfer.
Q: What is the supply voltage range for this component?
A: The required supply voltage is 1.425V to 1.575V, compliant with standard DDR3L specifications.
Q: What is the operating temperature range for this memory?
A: It is rated for operation from 0°C to +95°C, suitable for commercial or industrial environments.
Q: What package type does the NT5CB64M16GP-EK use?
A: It comes in a VFBGA-96 (Very Fine-Pitch Ball Grid Array) package with 96 balls.
Q: Is this DDR3 memory compatible with low-voltage designs?
A: Yes, with a supply down to 1.425V, it operates as a DDR3L device, supporting power-efficient applications.