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NSI6801TB-DDBR
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FabricantNovison
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Pièce fabricant #NSI6801TB-DDBR
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Fiche technique NSI6801TB-DDBR DataSheet
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En stock4299
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Spécifications
| Attribut | Valeur |
| Manufacturer | NOVOSENSE |
| Package / Case | DUB-8 |
Présentation
Features
- Isolation Voltage: 5 kVrms reinforced isolation (UL1577, VDE, CQC certified).
- Wide Supply Range: 3.3V to 20V (VDD1) and 4.5V to 35V (VDD2).
- High CMTI: >150 kV/µs (common-mode transient immunity).
- Fast Propagation Delay: 60 ns (typical) with low skew.
- Output Current: 4A peak source/sink for strong gate drive.
- Protections: Under-voltage lockout (UVLO) on both sides.
- Package: SOIC-16 wide-body for robust isolation.
- Applications: IGBT/MOSFET gate driving in motor control, solar inverters, and industrial power systems.
Compact, reliable, and efficient for high-voltage applications.
Pinout
Key Functions:
- Dual-channel isolation (supports bidirectional communication).
- High-speed data transmission (up to 150 Mbps).
- Wide supply voltage range (2.5V to 5.5V).
- High CMTI (>100 kV/µs) for noise immunity.
- Reinforced isolation (up to 5 kV RMS).
Pinout (simplified):
- VDD1, VDD2: Power supplies for each side.
- GND1, GND2: Ground connections.
- IN1, IN2: Input channels.
- OUT1, OUT2: Output channels.
Commonly used in industrial, automotive, and power systems for signal isolation.