NRVB140ESFT1G

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NRVB140ESFT1G

+Nomenclature

DIODE SCHOTTKY 40V 1A SOD123FL

  • FabricantSemi - conducteurs

  • Pièce fabricant #NRVB140ESFT1G

  • En stock3431

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Spécifications

Attribut Valeur
Part Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 560 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 30 µA @ 40 V
Mounting Type Surface Mount
Package / Case SOD-123F
Supplier Device Package SOD-123FL
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number NRVB140
Grade Automotive
Qualification AEC-Q101

Présentation

Description

The NRVB140ESFT1G is a Schottky diode manufactured by ON Semiconductor. It is designed for high-speed switching applications and features a low forward voltage drop, making it efficient for power management tasks. The diode has a peak reverse voltage rating of 40V and a maximum forward current of 1A. Its low reverse recovery time enhances its performance in fast-switching scenarios, such as in rectification and clamping applications.
The package type is typically SOD-123, which provides a compact footprint suitable for space-constrained designs. The NRVB140ESFT1G is ideal for use in various applications, including power supplies, DC-DC converters, and solar inverters. Its reliability and thermal performance make it a popular choice among engineers looking to optimize circuit efficiency and reliability. Overall, the NRVB140ESFT1G is a versatile component that helps improve the performance of electronic circuits by minimizing energy loss.

Equivalent

The NRVB140ESFT1G is a Schottky rectifier with a 40V, 1A rating. Equivalent products include the MBR140, 1N5820, and STPS1L40. When selecting an equivalent, ensure similar voltage, current ratings, and reverse recovery characteristics to maintain performance. Always check the specific datasheets for any slight variations in specifications.

Features

The NRVB140ESFT1G is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage of 40V, making it suitable for various power applications.
2. RDS(on): The device exhibits a low on-resistance (RDS(on)) of approximately 14 mΩ at a gate-source voltage of 10V, ensuring minimal power loss and high efficiency.
3. Current Capacity: It can handle a continuous drain current of up to 90A, facilitating robust performance in demanding conditions.
4. Thermal Management: The device supports high thermal performance with a maximum junction temperature of 150°C, allowing for reliable operation under high load conditions.
5. Package Type: Housed in a TO-220 package, it offers excellent thermal dissipation and easy mounting options.
6. Fast Switching: The NRVB140ESFT1G features low gate charge, enabling high-speed switching, which is beneficial for applications like DC-DC converters and motor drives.
These features make it ideal for power management and automotive applications.

Pinout

The NRVB140ESFT1G is a dual N-channel MOSFET with a pin count of 6. Its primary functions include switching and amplification in various electronic circuits, particularly in power management applications.
The pin configuration is as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
The device is commonly used in applications such as power switches, load drivers, and battery management systems due to its efficiency and compact design.

Manufacturer

The NRVB140ESFT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of electronic components, including power management, analog, sensors, and logic devices. The company focuses on providing efficient solutions for various applications in automotive, industrial, communications, and consumer electronics sectors.
Founded in 1999, ON Semiconductor has grown through various acquisitions, enhancing its portfolio and expanding its market reach. The company is known for its commitment to sustainability and innovation, offering products designed to improve energy efficiency and reduce environmental impact. ON Semiconductor serves a diverse customer base and is a key player in the semiconductor industry, contributing to advancements in technology and electronics.

Application

The NRVB140ESFT1G is a Schottky diode primarily used in applications such as power rectification, voltage clamping, and reverse polarity protection. It is suitable for use in power management circuits, DC-DC converters, and LED lighting. Its low forward voltage drop and fast switching speeds make it ideal for high-efficiency power supplies and battery-powered devices. Additionally, it can be utilized in RF applications and transient voltage suppression, enhancing overall circuit performance and reliability.

Package

The NRVB140ESFT1G is packaged in a surface mount type, specifically a DPAK (TO-252) package. This type is designed for efficient thermal dissipation and is commonly used in power applications.

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