NGTB75N65FL2WG

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NGTB75N65FL2WG

+Nomenclature

IGBT TRENCH/FS 650V 100A TO247

  • FabricantSemi - conducteurs

  • Pièce fabricant #NGTB75N65FL2WG

  • Package TO-247-3

  • En stock2322

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Spécifications

Attribut Valeur
Package / Case Bulk,Tube
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown(Max) 650 V
Current - Collector(Ic)(Max) 100 A
Current - Collector Pulsed(Icm) 200 A
Vce(on)(Max) @ Vge Ic 2V @ 15V, 75A
Power - Max 595 W
Switching Energy 1.5mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 310 nC
Td(on / off) @ 25°C 110ns/270ns
Test Condition 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Présentation

Description

The NGTB75N65FL2WG is a high-performance 650V, 75A IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, designed for power-switching applications. Key features include:
- Low VCE(sat) (1.55V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, improving efficiency.
- High current capability (75A continuous, 150A pulsed).
- Robust design with a wide operating temperature range (-55°C to +175°C).
- Co-packaged anti-parallel diode for simplified circuit design.
Ideal for motor drives, UPS systems, welding equipment, and industrial inverters, this IGBT balances efficiency and thermal performance. Its TO-247 package ensures effective heat dissipation.
For detailed specs, refer to the datasheet.

Features

The NGTB75N65FL2WG is a 650V, 75A IGBT from Infineon, designed for high-efficiency power applications. Key features include:
- Low VCE(sat): Reduces conduction losses for better efficiency.
- Fast switching: Optimized for high-frequency operation.
- High current rating (75A): Suitable for demanding applications.
- 650V breakdown voltage: Robust for industrial and automotive uses.
- Temperature-stable performance: Operates reliably under high thermal stress.
- Co-packaged diode: Integrated anti-parallel diode for simplified design.
- Low EMI: Minimizes noise in switching circuits.
Ideal for motor drives, UPS, and renewable energy systems.

Pinout

The NGTB75N65FL2WG is a 75A, 650V IGBT with an integrated anti-parallel diode, housed in a TO-247-3 package.
Pin Count: 3 pins (standard TO-247 configuration).
Pin Functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connected to load).
3. Emitter (E) – Ground/reference terminal (diode cathode).
Key Features:
- Low VCE(sat) for efficiency.
- Fast switching for high-frequency applications.
- Integrated diode for reverse current handling.
Commonly used in motor drives, inverters, and power supplies.

Application

The NGTB75N65FL2WG is a high-voltage IGBT transistor primarily used in:
- Power Electronics: High-efficiency converters, inverters, and motor drives.
- Industrial Applications: Welding equipment, UPS systems, and industrial automation.
- Renewable Energy: Solar inverters and wind power systems.
- Automotive: Electric vehicle (EV) charging and traction systems.
- Consumer Electronics: High-power SMPS (switched-mode power supplies).
Its 650V/75A rating and low switching losses make it ideal for high-power, high-frequency applications.

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