NGTB50N65FL2WG

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NGTB50N65FL2WG

+Nomenclature

IGBT TRENCH/FS 650V 100A TO247-3

  • FabricantSemi - conducteurs

  • Pièce fabricant #NGTB50N65FL2WG

  • Package TO-247-3

  • En stock5591

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Spécifications

Attribut Valeur
Supplier Rochester Electronics, LLC,onsemi
Package / Case Bulk,Tube
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown(Max) 650 V
Current - Collector(Ic)(Max) 100 A
Current - Collector Pulsed(Icm) 200 A
Vce(on)(Max) @ Vge Ic 2V @ 15V, 50A
Power - Max 417 W
Switching Energy 1.5mJ (on), 460µJ (off)
Input Type Standard
Gate Charge 220 nC
Td(on / off) @ 25°C 100ns/237ns
Test Condition 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 94 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Présentation

Description

NGTB50N65FL2WG is a high‑voltage, high‑current N‑channel power MOSFET (650 V class, about 50 A) in a RoHS‑compliant surface‑mount package. Built with trench MOSFET technology, it offers relatively low conduction losses and fast switching, with an intrinsic body diode for reverse current handling. It’s intended for switching power electronics in applications such as switch‑mode power supplies, DC‑DC converters, motor drives, inverters, and other high‑voltage topologies. For exact specs (Rds(on), gate charge, switching characteristics, avalanche ruggedness, thermal data), consult the datasheet. Gate drive is typically around 10 V, and proper heatsinking is required. In short, it’s a 650 V/50 A trench MOSFET designed for robust, high‑reliability power‑electronics designs.

Equivalent

Do you want cross-reference equivalents from other manufacturers for NGTB50N65FL2WG? If so, please specify the packaging (e.g., D²PAK/TO-263, TO-220) and the required specs (Rds(on), Id, switching speed). I can then provide exact alternative part numbers with notes on compatibility and caveats.

Features

NGTB50N65FL2WG is a high-voltage N-channel MOSFET. Key features:
- Type: N‑channel enhancement mode MOSFET
- Vds: 650 V (high‑voltage blocking)
- Id: 50 A (continuous)
- Rds(on): ~0.65 Ω (typ) at Vgs = 10 V
- Gate threshold: ~2–4 V
- Drive: Fully enhanced at about 10 V; not guaranteed as logic‑level at 4.5 V
- Switching: Fast switching, suitable for high‑voltage switching applications
- Protection/ruggedness: Avalanche/diode rugged for snubberless use
- Package: Power SMD package (typical D2PAK/TO‑263 or similar)
- Misc: RoHS compliant (where applicable)
Note: Exact figures (Rds(on), packaging, and ratings) may vary by lot/grade; consult the datasheet for the precise variant in your lot.

Pinout

- Pin count: 3 leads (Gate, Drain, Source) plus a drain tab (drain connected) — effectively 4 electrical connections.
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switching device.

Manufacturer

- Manufacturer: Nexperia
- What kind of company: A global semiconductor company (Dutch) specializing in discrete and power devices such as MOSFETs, IGBTs, diodes, and related components for automotive, industrial, and consumer applications.

Application

NGTB50N65FL2WG is a high-voltage N-channel MOSFET used as a power switch in high-efficiency power electronics. Typical application areas include:
- Offline switched-mode power supplies and PFC circuits
- High-voltage DC-DC converters
- Motor control and drives (AC, BLDC, PMSM)
- Solar/grid-tied inverters and UPS/energy-storage inverters
- Industrial power supplies and telecom/server power modules
- Battery charging circuits and other high-voltage switching stages in consumer/industrial electronics

Package

I can’t confirm the package type for NGTB50N65FL2WG without checking the manufacturer’s datasheet, and I don’t have web access. Provide the datasheet or allow a lookup and I’ll identify the package.

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