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NDD04N60ZT4G
+NomenclatureMOSFET N-CH 600V 4.1A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #NDD04N60ZT4G
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Package TO-252-3
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En stock7046
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 640 pF @ 25 V |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Présentation
Description
This MOSFET is designed with a low on-resistance, which reduces power loss and enhances efficiency, vital for applications needing high current handling with minimal energy dissipation. The NDD04N60ZT4G features a fast switching speed, which increases the switching frequency and allows for smaller component sizes in power circuits, thus contributing to more compact and efficient electronic designs.
Furthermore, the NDD04N60ZT4G comes in a compact TO-252 package, which is suitable for surface-mount applications, providing flexibility in PCB design and assembly. Its rugged design ensures reliability and long-term performance in industrial and commercial settings.
Equivalent
1. STMicroelectronics STP4N60M2 – 600V, 3.5A N-channel MOSFET.
2. Infineon IPP60R600P6 – 600V, 4.3A N-channel MOSFET.
3. Vishay SIHP6N60E – 600V, 4.9A N-channel MOSFET.
Always verify the datasheets for each to ensure compatibility with your specific application.
Features
It is housed in a DPAK (TO-252) package, which allows for efficient heat dissipation and ease of mounting on PCBs. This MOSFET is suitable for various applications, including power supplies, motor drives, and other industrial systems requiring reliable and efficient power management. Additionally, it adheres to industry standards for environmental and thermal performance, making it a dependable choice for electrical engineers looking for a balance of performance and durability.
Pinout
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. It receives the input signal to switch the MOSFET on or off.
2. Drain (D): This is the pin where the load current enters the MOSFET. It is connected to the drain region of the semiconductor.
3. Source (S): This is the pin where the load current exits the MOSFET. It is connected to the source region of the semiconductor.
4. Tab (also connected to Drain): The metal tab on the package is typically internally connected to the drain and often used for heat dissipation.
The primary function of the NDD04N60ZT4G is to serve as a switch or amplifier in electronic circuits, especially in power management applications.
Manufacturer
Application
1. Switching Power Supplies: Used in SMPS for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive systems.
3. Lighting Controls: Employed in LED and other lighting systems.
4. Inverters: Utilized in power inverters for renewable energy systems.
5. Battery Management: Important in battery protection and charging circuits.
6. HVAC Systems: Applied in controlling heating, ventilation, and air conditioning systems.
These applications benefit from the device's fast switching speed and high energy efficiency.