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NCP5181DR2G
+NomenclatureIC GATE DRVR HALF-BRIDGE 8SOIC
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FabricantSemi - conducteurs
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Pièce fabricant #NCP5181DR2G
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Package SOIC-8
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En stock4243
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Last Time Buy |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.3V |
| Current-PeakOutput(SourceSink) | 1.4A, 2.2A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 40ns, 20ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Présentation
Description
Key features of the NCP5181 include undervoltage lockout protection, which ensures that the driver operates only when the supply voltage is within a safe range, and a floating high-side driver architecture, which simplifies the design of half-bridge and full-bridge power converter topologies. The IC is commonly used in applications like DC-DC converters, motor drives, and Class D audio amplifiers. Available in a standard SOIC-8 package, the NCP5181DR2G provides a compact and reliable solution for enhancing power efficiency and thermal performance in high-frequency power conversion systems.
Equivalent
1. MIC4452/4451 - Microchip Technology
2. TC4420/4429 - Microchip Technology
3. FAN7390 - ON Semiconductor
4. IRS44273L - Infineon Technologies
5. UCC27714 - Texas Instruments
These alternatives should be evaluated for compatibility based on specific circuit requirements such as voltage, current, and other features. Always consult datasheets to ensure suitability for your application.
Features
1. High-Speed Operation: Capable of driving MOSFETs with fast rise and fall times, thus supporting high-frequency applications.
2. Wide Supply Range: Operates over a wide supply voltage range, providing design flexibility.
3. Output Current Capability: Offers significant peak current capability to rapidly charge and discharge MOSFET gate capacitances.
4. Under-Voltage Lockout (UVLO): Incorporates UVLO to protect the system during low supply voltage conditions.
5. Low Quiescent Current: Ensures low power consumption, enhancing overall system efficiency.
6. TTL Logic Compatibility: Compatible with TTL logic levels, simplifying interfacing with controllers.
7. Thermal Protection: Includes thermal protection features to prevent damage from overheating.
8. Compact Package: Available in a compact package, facilitating space-saving designs.
These features make the NCP5181DR2G suitable for various power management applications requiring reliable and efficient MOSFET driving capabilities.
Pinout
1. V_CC: Supply voltage input.
2. GND: Ground reference for the device.
3. IN: Input signal for controlling the gate driver.
4. V_BAT: Battery supply voltage input, which can be different from V_CC.
5. OUT: Output pin for driving the gate of a MOSFET or IGBT.
6. PGND: Power ground, typically connected to the source of the MOSFET.
7. V_G: Voltage input to provide a gate drive voltage.
8. NC: No connection, typically not used.
This configuration allows the NCP5181 to efficiently drive high-speed switching applications with robust performance.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Enhances efficiency and performance in AC/DC and DC/DC converters.
2. Motor Control: Provides high-speed switching for brushless DC (BLDC) and other motor control systems.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for efficient energy conversion.
4. Induction Heating: Drives high-frequency power switches in induction heating applications.
5. Class D Audio Amplifiers: Improves efficiency in high-power audio amplification systems.
These applications benefit from the NCP5181DR2G's ability to drive high-side and low-side MOSFETs efficiently.