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NCEP023N10LL
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FabricantWuxi nce semiconducteur de puissance
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Pièce fabricant #NCEP023N10LL
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Fiche technique NCEP023N10LL DataSheet
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En stock27551
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Spécifications
| Attribut | Valeur |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package / Case | TOLL-8 |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 300A |
| Pd - Power Dissipation | 380W |
| Drain to Source Voltage (Vdss) | 100V |
| Rds(on) | 1.7mΩ@10V,150A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 240nC@50V |
| Input Capacitance(Ciss @ Vds) | 14000pF@50V |
| Reverse Transfer Capacitance (Crss @ Vds) | 74pF@50V |
Présentation
Equivalent
- Infineon IPD90N04S4
- Vishay SiHP10N50E
- STMicroelectronics STP80NF10
These offer similar voltage, current, and package compatibility. Always verify datasheet specs for exact replacements.
Features
- Voltage Rating: 100V
- Current Rating: 23A (continuous)
- Low On-Resistance (RDS(on)): Typically 23mΩ (at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves reliability in rugged conditions
- Package: TO-252 (DPAK), suitable for surface-mount applications
- Applications: Power supplies, motor control, DC-DC converters, and load switching
This MOSFET is designed for efficiency and durability in demanding power management tasks.
Pinout
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 100V drain-source voltage (VDS)
- 23mΩ typical on-resistance (RDS(on))
- High current handling (up to 100A)
- Low gate charge for efficient switching
Commonly used in power supplies, motor control, and DC-DC converters.