Images à titre indicatif uniquement
MX29LV160DBXBI-70G
+NomenclatureIC FLASH 16MBIT PARALLEL 48TFBGA
-
FabricantWanghong
-
Pièce fabricant #MX29LV160DBXBI-70G
-
Package TFBGA-48
-
En stock2879
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package / Case | Tray |
| Series | MX29LV |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 16Mb (2M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 70ns |
| Access Time | 70 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Présentation
Description
The MX29LV160DBXBI-70G features a sector erase architecture, allowing for individual sectors to be erased and programmed, which is beneficial for applications requiring frequent updates. It supports fast byte/word programming and is equipped with hardware and software data protection mechanisms to prevent accidental erasure or programming. The chip is designed to operate within an industrial temperature range, making it suitable for a wide variety of environments. It is typically used in embedded systems, consumer electronics, and other applications where reliable, non-volatile memory is critical.
Equivalent
1. SST39VF1601 - by Microchip Technology
2. AM29LV160DB - by AMD (now Adesto Technologies)
3. W29GL160CB - by Winbond
4. AT49BV1604 - by Atmel (now Microchip Technology)
5. S29AL016J - by Cypress Semiconductor (now Infineon Technologies)
These alternatives offer similar features in terms of memory capacity and performance. Always verify compatibility based on specific requirements and pin configurations.
Features
1. Architecture: Organized as 2M x 8 or 1M x 16, allowing flexibility in data handling.
2. Technology: Employs CMOS process technology for high performance.
3. Read Speed: Offers a fast access time of 70 nanoseconds for efficient data retrieval.
4. Operating Voltage: Functions with a single 3.0V power supply, suitable for low-power applications.
5. Program and Erase: Supports in-system programming through standard EPROM programming tools. It has a sector erase capability with 32 blocks for versatile data management.
6. Endurance: Provides a minimum of 100,000 program/erase cycles per sector, ensuring durability.
7. Data Retention: Guarantees data retention for 20 years, making it reliable for long-term storage.
8. Interface: Compatible with JEDEC standards, facilitating easy integration.
9. Applications: Suitable for embedded systems, automotive controls, and other electronic applications requiring robust flash memory.
These features make it ideal for various applications requiring reliable and efficient flash memory.
Pinout
Key features include fast access time of 70 nanoseconds, low power consumption, and support for single 3.0V read, program, and erase operations. The device also includes features like hardware reset, boot block protection, and sector erase capabilities.