Images à titre indicatif uniquement
DIODE GEN 1.2KV 300A 3 TOWER
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FabricantGenesic semiconducteurs
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Pièce fabricant #MURTA600120R
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Fiche technique MURTA600120R DataSheet
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Package Three Tower
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En stock2219
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io)(per Diode) | 300A |
| Voltage - Forward (Vf) (Max) @ If | 2.6 V @ 300 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 25 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
