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MT41J64M16JT-15E:G
+NomenclatureIC DRAM 1GBIT PAR 96FBGA
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FabricantMicron Technology Co., Ltd.
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Pièce fabricant #MT41J64M16JT-15E:G
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En stock5607
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Spécifications
| Attribut | Valeur |
| Part Status | Obsolete |
| Base Product Number | MT41J64M16 |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 1Gbit |
| Memory Organization | 64M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 667 MHz |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (8x14) |
| Packaging | Tray |
Présentation
Description
The "15E" in its designation indicates a speed grade, with a clock frequency of 667 MHz, translating to a data transfer rate of 1333 MT/s (megatransfers per second). The "G" at the end denotes the lead-free and RoHS-compliant nature of the component, making it more environmentally friendly.
This memory module is commonly used in computing and telecommunications systems where efficient data storage and retrieval are critical. It supports features like self-refresh and on-die termination, which enhance performance and reliability. With a small form factor and low power consumption, it is ideal for use in compact systems such as laptops and embedded devices.
Equivalent
1. Hynix H5TQ2G63GFR - A similar DDR3 SDRAM offering by SK Hynix.
2. Samsung K4B2G1646Q - A DDR3 SDRAM with comparable specifications.
3. Kingston D2516EC4BXGJD - Another equivalent in the DDR3 SDRAM category.
4. Nanya NT5CB128M16FP - A DDR3 SDRAM with equivalent features.
These products share similar specifications in terms of memory size, speed, and voltage.
Features
1. Density and Configuration: It has a memory density of 1Gb and a configuration of 64 Meg x 16.
2. Speed: The component operates at a clock speed of 1333 MHz, providing a data transfer rate of up to 1066 MT/s (Millions of Transfers per second).
3. Voltage: It runs on a voltage supply of 1.5V, making it energy-efficient.
4. Package: The DRAM comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, which aids in efficient heat dissipation and reduces electrical resistance.
5. Temperature Range: It supports an operating temperature range suitable for consumer applications.
6. Burst Length: The device features a burst length of 8, with sequential and interleaved burst types.
7. Auto-Refresh: It supports auto-refresh and self-refresh modes for improved data retention and stability.
These characteristics make it suitable for a wide range of applications, including computing and networking systems.
Pinout
The primary function of the MT41J64M16JT-15E:G is to provide volatile memory suitable for high-speed data storage and retrieval, used in a variety of applications including computers, gaming consoles, and other electronics requiring efficient memory solutions. It operates with a supply voltage of 1.5V and supports clock speeds up to 667 MHz (DDR3-1333).
The device supports features such as programmable read/write burst lengths, an 8n-prefetch architecture, and on-die termination. The 16-bit data bus width allows for efficient data handling. The chip is organized as 64M x 16, meaning it has 64 million rows and 16 data bits per row.
For detailed pin functions and electrical characteristics, consulting the official datasheet from Micron is recommended.
Manufacturer
Application
1. Computing: Desktops, laptops, and servers for improving system memory capacity and speed.
2. Networking: Routers, switches, and other networking equipment for handling large data loads efficiently.
3. Consumer Electronics: Smart TVs, gaming consoles, and set-top boxes to enhance performance and user experience.
4. Industrial: Automation systems and industrial controls requiring reliable and high-speed memory operations.
5. Telecommunications: Base stations and other telecom infrastructure for managing high volumes of data traffic.
These applications benefit from its reliability, speed, and power efficiency.
Package
Frequently Asked Questions
Q: What is the memory density and organization of the MT41J64M16JT-15E:G?
A: It is a 1Gbit DDR3 SDRAM organized as 64M words x 16 bits, suited for high-density parallel data applications.
Q: What is the maximum clock frequency this component supports?
A: It supports a clock frequency of 667 MHz, enabling high-speed DDR3 data transfer rates.
Q: What is the recommended voltage supply range for this DDR3 device?
A: The required voltage supply is 1.425V to 1.575V, standard for DDR3 memory operation.
Q: What is the operating temperature range for the MT41J64M16JT-15E:G?
A: It operates from 0°C to 95°C (TC case temperature), suitable for commercial/industrial environments.
Q: Is this part obsolete or still in active production?
A: The part status is marked as Obsolete; verify stock availability before new design-ins.
Q: What package type does this memory component use?
A: It comes in a 96-TFBGA surface mount package, with supplier device package size 96-FBGA (8x14mm).
Q: Does this memory interface use serial or parallel communication?
A: It uses a parallel memory interface, typical for DDR3 SDRAM to achieve high bandwidth.
Q: Is the MT41J64M16JT-15E:G a volatile or non-volatile memory?
A: It is volatile DRAM (SDRAM - DDR3), requiring power to retain stored data.
