MT40A1G16KNR-075:E

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MT40A1G16KNR-075:E

+Nomenclature

IC DRAM 16GBIT PAR 96FBGA

  • FabricantMicron Technology Co., Ltd.

  • Pièce fabricant #MT40A1G16KNR-075:E

  • En stock18636

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Spécifications

Attribut Valeur
Part Status Obsolete
Base Product Number MT40A1G16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 1G x 16
Memory Interface Parallel
Clock Frequency 1.33 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13.5)
Packaging Tray
Access Time 19 ns

Présentation

Description

The MT40A1G16KNR-075:E is a DRAM (Dynamic Random Access Memory) module designed for high-performance computing applications. It is part of Micron's DDR4 SDRAM lineup, providing efficient data storage and retrieval to enhance system performance. This particular model is a 16Gb (gigabit) memory component organized as 1G x 16, which means it has a wide data interface that can handle large amounts of data simultaneously. Operating at a data rate of 2400 MT/s (Megatransfers per second), it offers a balance of speed and power efficiency, making it suitable for applications that demand fast data processing, such as servers, high-end workstations, and gaming systems.
The "075" in the part number typically refers to its speed grade, while the "E" suffix indicates specific performance or production characteristics set by the manufacturer. With features like low latency, high bandwidth, and energy-efficient operation, the MT40A1G16KNR-075:E supports the needs of modern computing environments, providing quick access to data and improving overall system efficiency.

Equivalent

The MT40A1G16KNR-075:E is a Micron DDR4 SDRAM chip. Equivalent products typically include other DDR4 SDRAM chips with similar specifications from manufacturers like Samsung, SK Hynix, and Kingston. For instance, Samsung's K4A8G165WB-BCRC or SK Hynix's H5AN8G6NCJ-XNC may serve as alternatives, depending on parameters like speed, capacity, and voltage requirements. Always verify compatibility with your specific application requirements.

Features

The MT40A1G16KNR-075:E is a DDR4 SDRAM component designed for high-performance and energy-efficient applications. Key features include:
1. Capacity: 16 Gb (Gigabits).
2. Organization: 1G x 16 configuration.
3. Data Rate: Operates at speeds of up to 3200 MT/s.
4. Voltage: Operates at a low voltage of 1.2V, contributing to power efficiency.
5. Package: Available in a 96-ball FBGA package.
6. Bank Architecture: Features a 16-bank architecture for efficient data handling.
7. Error Correction: Supports error-correcting code (ECC) to enhance data integrity.
8. Temperature Range: Supports a wide temperature range, making it suitable for various operational environments.
9. Compatibility: Compliant with JEDEC standards, ensuring broad compatibility with other DDR4 systems.
10. Features: Includes on-die termination (ODT), bank group interleaving, and programmable CAS latency.
These features make the MT40A1G16KNR-075:E suitable for a variety of applications, including computing, networking, and industrial applications, where performance and reliability are critical.

Pinout

The MT40A1G16KNR-075:E is a DRAM chip from Micron's DDR4 SDRAM portfolio. It typically features:
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array) package.
- Function: This DRAM chip is designed to provide high-speed data storage and retrieval for computing applications. It's organized as a 16 Meg x 16 x 8 banks for a total capacity of 1 Gigabit. The "1G16" in its part number indicates it has a width of 16 bits.
The chip supports features typical of DDR4 SDRAM, such as high-speed operation, improved power efficiency, and advanced error-correction capabilities. It's optimized for use in a wide range of applications, including servers, laptops, and desktops, where fast and reliable memory performance is critical.

Manufacturer

The MT40A1G16KNR-075:E is a DRAM memory chip manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions. It is one of the largest semiconductor manufacturers in the world and is known for its innovations in memory technologies. The company’s product portfolio includes DRAM, NAND flash memory, and SSDs (Solid State Drives), among other advanced memory technologies.
Micron is involved in designing and manufacturing a wide range of memory solutions that are used in various applications, including consumer electronics, data centers, mobile devices, and automotive systems. The company plays a significant role in advancing semiconductor technology and is a key player in the global memory industry.

Application

The MT40A1G16KNR-075:E is a DDR4 SDRAM memory chip, commonly used in various applications that demand high-performance memory solutions. Key application areas include:
1. Data Centers and Servers: Enhances performance in handling large datasets and running complex applications.
2. Personal Computers and Laptops: Improves overall system speed and responsiveness.
3. Networking Equipment: Supports routers and switches requiring fast data processing.
4. Embedded Systems: Used in applications like automotive infotainment and industrial control systems.
5. Gaming Consoles: Facilitates high-speed data transfer and processing for smooth gaming experiences.
These applications benefit from the chip's high data transfer rates and energy efficiency.

Package

The MT40A1G16KNR-075:E is a DRAM chip from Micron Technology. It is typically provided in a FBGA (Fine-Pitch Ball Grid Array) package. This type of packaging is favored for its efficient use of space and ability to support high-density memory configurations.

Frequently Asked Questions


Q: What is the memory density and organization of the MT40A1G16KNR-075:E?
A: It is a 16Gbit SDRAM DDR4 with a 1G x 16 organization, offering high-density volatile storage for parallel memory interfaces.


Q: What is the maximum clock frequency supported by this DRAM?
A: It supports a clock frequency of up to 1.33 GHz, ensuring high-speed data transfer rates for demanding computing applications.


Q: What voltage supply range does this component require?
A: It requires a supply voltage of 1.14V to 1.26V, compliant with DDR4 low-power operation standards.


Q: What is the access time and write cycle time for this memory?
A: The access time is 19 ns, and the write cycle time for word/page is 15 ns, enabling efficient read/write performance.


Q: Can this device operate in high-temperature environments?
A: Yes, it operates within a temperature range of 0°C to 95°C (TC), making it suitable for industrial-grade thermal conditions.


Q: What is the package type and mounting style?
A: It comes in a 96-TFBGA package (FBGA 7.5x13.5mm) for surface mount technology, ideal for compact PCB layouts.


Q: Is this component currently in active production?
A: No, it has a Part Status of "Obsolete," indicating it is no longer in active production; check availability for legacy designs.


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