MT28EW512ABA1HJS-0SIT

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MT28EW512ABA1HJS-0SIT

+Nomenclature

IC FLASH 512MBIT PARALLEL 56TSOP

  • FabricantMicron Technology Co., Ltd.

  • Pièce fabricant #MT28EW512ABA1HJS-0SIT

  • En stock4651

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Spécifications

Attribut Valeur
Part Status Active
Base Product Number MT28EW512
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 95 ns

Présentation

Description

The MT28EW512ABA1HJS-0SIT is a NOR Flash memory device produced by Micron Technology. It features a 512 Mb (megabit) storage capacity, making it suitable for applications requiring non-volatile storage. NOR Flash is known for its fast read speeds and efficient random access capabilities, which are essential for executing code directly from the Flash memory in embedded systems.
Key features of the MT28EW512ABA1HJS-0SIT include a parallel interface that enables quick data retrieval and a high level of endurance and reliability, with support for a significant number of program/erase cycles. This makes it ideal for applications in automotive, industrial, and consumer electronics, where reliable memory performance is crucial.
The device also supports various operating temperature ranges and supply voltages, enhancing its versatility across different environments. Additionally, Micron's NOR Flash technology ensures data integrity and security, crucial for safeguarding sensitive information in critical applications. Overall, the MT28EW512ABA1HJS-0SIT is engineered for robust performance in demanding electronic applications.

Equivalent

The MT28EW512ABA1HJS-0SIT is a 512Mb NOR Flash memory chip. Equivalent products may include NOR Flash memory chips with similar specifications from other manufacturers such as the Spansion (now Cypress) S29GL512S, Macronix MX29GL512, or Winbond W29GL512. These alternatives should match key specifications like memory size, interface type (e.g., parallel), voltage requirements, and operating temperature range. Always verify compatibility based on the specific application requirements.

Features

The MT28EW512ABA1HJS-0SIT is a 512Mb NOR Flash memory device known for its high-speed performance and reliability. It operates on a 3V power supply and features a dual I/O interface, which enhances data transfer rates. The device supports a high-speed read mode of up to 104MHz, making it suitable for applications requiring fast data access. It is organized as 32M x 16 and comes in a 56-pin TSOP package.
Key features include a sector architecture with 128KB sectors, allowing for efficient data management. The device also supports erase and program suspend/resume commands, enabling flexibility during data modification without interrupting read operations. Additional features include advanced security options like password protection and a hardware reset pin for enhanced control. The MT28EW512ABA1HJS-0SIT is commonly used in embedded systems, automotive applications, and industrial environments due to its robust performance and reliability. Its operating temperature range from -40°C to 85°C ensures functionality in diverse conditions.

Pinout

The MT28EW512ABA1HJS-0SIT is a 512Mb (megabit) NOR Flash memory device produced by Micron Technology. It typically comes in a 56-pin TSOP (Thin Small Outline Package) configuration. The primary function of this NOR Flash memory is to store code and data in electronic devices, enabling fast read times and reliable data retention, making it suitable for applications like firmware storage and execution in embedded systems.
Key features of this device include:
1. x8/x16 Data Width: It supports both 8-bit and 16-bit data operations, allowing flexibility in data handling.
2. Asynchronous Read Access: Provides fast read access times for efficient data retrieval.
3. Program/Erase Suspend and Resume: Offers the ability to pause and resume programming or erasure, which aids in multitasking within the system.
4. Sector Erase Architecture: Supports erasing in sector increments, allowing for efficient memory management.
This NOR Flash device is widely used in industrial, automotive, and communication applications due to its robustness and efficient non-volatile memory capabilities.

Manufacturer

The MT28EW512ABA1HJS-0SIT is manufactured by Micron Technology, Inc. Micron is an American multinational corporation specializing in the production of memory and storage solutions. The company is known for its dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor products. Micron plays a critical role in the tech industry, providing essential components for various applications, including personal computers, mobile devices, servers, automotive systems, and more. As a leader in the memory and storage market, Micron is recognized for its innovation and development of advanced technologies in the semiconductor sector.

Application

The MT28EW512ABA1HJS-0SIT is a 512Mb NOR Flash memory chip, commonly utilized in applications requiring reliable, non-volatile storage. Key application areas include embedded systems, automotive electronics, consumer electronics, industrial automation, and networking equipment. It is often used for storing firmware, boot code, configuration parameters, and executable code due to its fast read speeds and high reliability. Additionally, its robust performance in extreme environments makes it suitable for aerospace and defense applications.

Package

The package type of the MT28EW512ABA1HJS-0SIT is typically a Ball Grid Array (BGA). Specifically, it is a 56-ball BGA package, which is common for flash memory components to provide efficient connections and compact form factors.

Frequently Asked Questions


Q: What is the memory organization for the MT28EW512ABA1HJS-0SIT?
A: It supports 64M x 8-bit or 32M x 16-bit organization, configurable via byte/word mode selection.


Q: What is the supply voltage range for this NOR Flash?
A: The operating voltage range is 2.7V to 3.6V, suitable for standard 3V applications.


Q: What is the typical access time and write cycle time?
A: Access time is 95 ns; word/page write cycle time is 60 ns, enabling fast read and program operations.


Q: What is the operating temperature range for this device?
A: It operates from -40°C to +85°C (TA), supporting industrial-grade temperature environments.


Q: What package options are available for this Micron NOR Flash?
A: It is supplied in a 56-TFSOP (18.40mm width) package, with a 56-TSOP supplier device package option.


Q: Is this component suitable for parallel interface designs?
A: Yes, it features a parallel memory interface, ideal for high-speed data transfer in embedded systems.


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