Images à titre indicatif uniquement
MRF177
+NomenclatureFET RF 2CH 65V 400MHZ 744A-01
-
FabricantSolutions technologiques Macom
-
Pièce fabricant #MRF177
-
Fiche technique MRF177 DataSheet
-
Package 744A-1
-
En stock1959
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package / Case | Tray |
| Part Status | Active |
| Transistor Type | 2 N-Channel (Dual) Common Source |
| Frequency | 400MHz |
| Gain | 12dB |
| Voltage - Test | 28 V |
| Current Rating (Amps) | 16A |
| Current - Test | 200 mA |
| Power - Output | 100W |
| Voltage - Rated | 65 V |
Présentation
Description
Key features:
- High gain (13 dB typical)
- 28V operating voltage
- Excellent thermal stability
- Robust TO-270 package
Ideal for land mobile radio, military comms, and broadcast systems, the MRF177 ensures reliable performance in demanding environments. Its rugged design supports continuous wave (CW) and pulsed operation, making it versatile for RF power amplification.
For detailed specs, refer to the datasheet from NXP.
Pinout
- Pin Count: 4 (Flange-mounted package, typically with 2 RF pins (input/output), 1 ground (flange), and 1 bias pin).
- Function:
- RF Input (Gate): Accepts the signal to be amplified.
- RF Output (Drain): Delivers the amplified signal.
- Bias (Source): Controls the operating point (often grounded via a resistor/inductor).
- Flange (Ground): Provides thermal/electrical grounding.
Key specs:
- Frequency: Up to 500 MHz.
- Power: 125W (typical, under specified conditions).
- Class AB operation for linear amplification.
Used in broadcast, military, and industrial RF systems.
Application
1. RF Amplifiers – Boosts signal strength in communication systems.
2. Broadcast Transmitters – Enhances TV and radio signal transmission.
3. Industrial Heating – Powers RF heating and plasma generation.
4. Military & Aerospace – Supports radar and secure communication.
5. Medical Equipment – Used in RF-based medical devices like diathermy.
Its high-frequency and power-handling capabilities make it ideal for demanding RF applications.