MRF1517NT1

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MRF1517NT1

+Nomenclature

FET RF 25V 520MHZ PLD-1.5

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
TransistorType LDMOS
Frequency 520MHz
Gain 14dB
Voltage-Test 7.5 V
CurrentRating(Amps) 4A
Current-Test 150 mA
Power-Output 8W
Voltage-Rated 25 V
Package/Case PLD-1.5

Présentation

Description

The MRF1517NT1 is a high-power RF LDMOS transistor designed by NXP Semiconductors for industrial, scientific, and medical (ISM) applications, as well as broadcast and RF power amplification. Key features include:
- Frequency Range: 1.8–600 MHz
- Output Power: Up to 300W (dependent on frequency and configuration)
- High Efficiency: Optimized for Class AB operation
- Robustness: 50V operation with excellent thermal stability
- Matching: Internal input/output matching for simplified design
Common applications include RF amplifiers in FM broadcast, HF/VHF/UHF systems, and RF plasma generators. The device is housed in a NI-1230-4 package, ensuring reliable thermal performance.
For detailed specifications, refer to the NXP datasheet.

Equivalent

Equivalent products to the MRF1517NT1 (RF power transistor) include:
- BLF578XR (NXP)
- PTVA101K02EV (Wolfspeed)
- MRF1513 (NXP, lower power)
- BLF188XR (NXP, higher power)
These alternatives offer similar RF performance in LDMOS or GaN technology. Verify datasheets for exact specs.

Features

The MRF1517NT1 is an N-channel RF power MOSFET by NXP, designed for high-frequency applications. Key features:
- Frequency Range: 1.8–600 MHz
- Output Power: 300 W (at 28 V, 175 MHz)
- High Efficiency: Up to 70%
- Voltage Rating: 50 V
- Gain: 20 dB (typical at 175 MHz)
- Package: NI-1230S (flanged, bolt-down)
- Thermal Resistance: 0.25°C/W (junction-to-case)
- Applications: RF amplifiers in industrial, broadcast, and aerospace systems.
Robust and reliable, it suits high-power RF designs.

Package

The MRF1517NT1 is a high-power RF transistor housed in a TO-272-4 (NI-1230H-4) package. This ceramic flange package is designed for efficient thermal management and high-frequency performance, commonly used in RF and microwave applications. The package includes four leads for gate and drain connections, ensuring robust electrical and thermal characteristics.

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