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MMRF1304LR5
+NomenclatureRF MOSFET LDMOS 50V NI360
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FabricantNXP USA Inc.
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Pièce fabricant #MMRF1304LR5
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En stock7057
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Spécifications
| Attribut | Valeur |
| Part Status | Obsolete |
| Technology | LDMOS |
| Frequency | 512MHz |
| Gain | 25.9dB |
| Voltage - Test | 50 V |
| Current - Test | 10 mA |
| Power - Output | 25W |
| Voltage - Rated | 133 V |
| Mounting Type | Chassis Mount |
| Package / Case | NI-360 |
| Supplier Device Package | NI-360 |
| Base Product Number | MMRF1 |
Présentation
Description
The MMRF1304LR5 is engineered to provide reliable power output, ensuring efficiency and longevity in various applications. Its construction often includes advanced materials that enhance safety and performance, minimizing risks such as overheating or degradation over time.
Overall, the MMRF1304LR5 represents a significant advancement in battery technology, contributing to the development of more efficient and sustainable energy solutions in the growing market for renewable energy and electric mobility.
Equivalent
Features
1. Frequency Range: Operates efficiently in the frequency range of 1.8 to 2.5 GHz.
2. Output Power: Delivers high output power, typically up to 100 W.
3. High Efficiency: Offers excellent power efficiency, making it suitable for applications requiring lower thermal management.
4. Linearity: Designed for good linearity, which is essential for communication systems.
5. Package Type: Comes in a hermetically sealed ceramic package, ensuring reliability in harsh environments.
6. Thermal Performance: Features excellent thermal stability, enabling it to maintain performance under varying operational conditions.
7. Bias Stability: Provides improved bias stability for consistent performance over time.
These attributes make the MMRF1304LR5 an ideal choice for amplifiers in telecommunications, broadcasting, and other RF applications.
Pinout
Pin Functions:
1. Gate (G): Controls the on/off state of the transistor.
2. Drain (D): The main output for RF power; where the amplified signal is taken.
3. Source (S): Provides a return path for current; typically connected to ground.
4. Drain Bias (DB): Used for providing biasing to the drain for optimal operation.
5. Source Bias (SB): Used for providing biasing to the source, ensuring proper operation under varying conditions.
The MMRF1304LR5 is known for its efficiency and linearity, making it suitable for applications in the 1.25 to 1.5 GHz range. Always refer to the manufacturer’s datasheet for specific electrical characteristics and application guidelines.
Manufacturer
Application
1. RF Power Amplifiers: Used in wireless communication systems for amplifying signals.
2. Base Stations: Employed in cellular base stations for efficient signal transmission.
3. Broadcasting: Utilized in television and radio transmitters for high-frequency applications.
4. Industrial RF Heating: Applied in induction heating systems for industrial processes.
5. Satellite Communication: Used in satellite transponders and ground stations for reliable signal amplification.
Its robust performance and efficiency make it suitable for these demanding environments.