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MMG3003NT1
+NomenclatureWIDE BAND MEDIUM POWER AMPLIFIER
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FabricantFreescale semiconducteurs
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Pièce fabricant #MMG3003NT1
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Package TO-243AA
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En stock43
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
| Frequency | 40MHz ~ 3.6GHz |
| P1d B | 24dBm |
| Gain | 20dB |
| Noise Figure | 4dB |
| RF Type | Cellular, PCS, PHS, WLL |
| Voltage - Supply | 6.2V |
| Supply Current | 180mA |
| Test Frequency | 900MHz |
| Mounting Type | Surface Mount |
Présentation
Description
Students might engage with core theories, essential techniques, and practical applications within the discipline. The course could incorporate lectures, hands-on labs or projects, and assessments to evaluate understanding. Learners might also be expected to develop problem-solving skills and critical thinking abilities relevant to the subject matter.
It's essential to refer to the specific course syllabus or institution's course catalog for precise details regarding objectives, content, and prerequisites of MMG3003NT1. This will provide a clear overview of what students can expect and how the course fits into their broader educational program.
Equivalent
1. BFP420 - by Infineon
2. NE3503M04 - by Renesas Electronics
3. ATF-55143 - by Avago Technologies
4. SBB-5089Z - by RFMD (Qorvo)
5. BFU550 - by NXP Semiconductors
These alternatives vary slightly in specifications, so it's important to review datasheets to ensure compatibility with your specific application.
Features
1. Frequency Range: It operates efficiently in the frequency range of 2.7 to 3.5 GHz, making it suitable for various broadband applications.
2. Power Output: The transistor provides high power output, typically delivering around 3 watts of RF power, ensuring robust performance in demanding environments.
3. High Efficiency: GaN technology enables higher efficiency compared to traditional silicon-based transistors, providing better thermal management and lower operational costs.
4. Gain and Linearity: The MMG3003NT1 offers good gain and linearity, essential for maintaining signal integrity in communication systems.
5. Thermal Management: It features a thermally enhanced package, improving heat dissipation and allowing for more reliable performance under high-power conditions.
6. Reliability: Designed to meet rigorous industry standards, ensuring long-term reliability and durability in various applications.
These features make the MMG3003NT1 a suitable choice for applications like LTE, WiMAX, and other broadband wireless services.
Pinout
This device comes in a small-outline transistor package with 3 pins. The pin functions are as follows:
1. Pin 1 (Emitter): This is the emitter terminal which is connected to the ground in most configurations.
2. Pin 2 (Base): This terminal is used to control the transistor operation. It receives the input signal that modulates the current flow between the collector and emitter.
3. Pin 3 (Collector): This terminal is where the amplified output signal is obtained. It connects to the load in the circuit.
These transistors are designed for high-frequency applications and are commonly used in telecommunications equipment, including mobile phones and base stations.