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MMBT5089LT1G
+NomenclatureTRANS NPN 25V 0.05A SOT23-3
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FabricantSemi - conducteurs
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Pièce fabricant #MMBT5089LT1G
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Fiche technique MMBT5089LT1G DataSheet
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Package TO-236-3
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En stock5464
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 50 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 25 V |
| VceSaturation(Max)@IbIc | 500mV @ 1mA, 10mA |
| Current-CollectorCutoff(Max) | 50nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 400 @ 100µA, 5V |
| Power-Max | 300 mW |
| Frequency-Transition | 50MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Présentation
Description
Key specifications include a maximum collector current (Ic) of 100 mA, a maximum collector-emitter voltage (Vce) of 25 V, and a power dissipation of 225 mW. The MMBT5089LT1G also features a high current gain (hFE) typically ranging from 100 to 300, which is beneficial for signal amplification purposes.
This transistor is often utilized in circuits demanding high-frequency performance, such as RF amplifiers, oscillators, and signal processing components. Its robust performance and small form factor make it a reliable choice for designers looking to optimize space and performance in their electronic designs.
Equivalent
1. 2N5089
2. BC547
3. BC548
4. BC549
5. PN2222
These alternatives may vary slightly in parameters, so always check the datasheets to ensure compatibility with your specific requirements.
Features
1. High Gain: It offers a high DC current gain (hFE), which is beneficial for amplification tasks.
2. Low Noise: The transistor is engineered to ensure low noise performance, making it suitable for audio and signal processing applications.
3. Surface-Mount Package: Available in a compact SOT-23 package, it is ideal for space-constrained PCB designs.
4. Maximum Ratings: It has a collector-emitter voltage (Vceo) of 25V and a collector current (Ic) of 50mA, suitable for low-power applications.
5. Thermal Characteristics: Designed to operate over a wide temperature range, enhancing reliability in various environments.
These features make the MMBT5089LT1G a versatile transistor for various electronic circuits, especially where space, efficiency, and performance are critical considerations.
Pinout
1. Pin 1 (Emitter): This pin is the emitter of the transistor, which is where current flows out of the transistor.
2. Pin 2 (Base): This pin is the base of the transistor, which controls the transistor's operation. A small current or voltage applied to the base allows a larger current to flow from the collector to the emitter.
3. Pin 3 (Collector): This pin is the collector of the transistor, which is where current flows into the transistor.
The MMBT5089LT1G is used in a variety of applications such as amplification and switching due to its high gain and low noise characteristics. It is suitable for use in low-power applications.