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MMBF4393LT1G
+NomenclatureJFET N-CH 30V 0.225W SOT23-3
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FabricantSemi - conducteurs
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Pièce fabricant #MMBF4393LT1G
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Package SOT23-3
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En stock6952
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Voltage-Breakdown(V(BR)GSS) | 30 V |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-Drain(Idss)@Vds(Vgs=0) | 5 mA @ 15 V |
| Voltage-Cutoff(VGSoff)@Id | 500 mV @ 10 nA |
| InputCapacitance(Ciss)(Max)@Vds | 14pF @ 15V |
| Resistance-RDS(On) | 100 Ohms |
| Power-Max | 225 mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Présentation
Description
Key features of the MMBF4393LT1G include:
1. Low Noise: It provides low-noise amplification, making it suitable for sensitive audio and RF circuits.
2. High Gain: Offers high input impedance and high voltage gain, essential for efficient signal amplification.
3. Compact Package: Supplied in a SOT-23 package, which is ideal for space-constrained applications on printed circuit boards.
4. Reliability: Known for its stable performance and reliability in various conditions.
When using the MMBF4393LT1G, it's important to consider its maximum ratings for drain-source voltage, gate-source voltage, and drain current to prevent damage. Understanding its characteristics can help in designing effective circuits for precise and efficient signal processing.
Equivalent
Features
1. Low Noise: Designed to minimize noise, making it suitable for audio and high-frequency applications.
2. High Gain: Provides high gain, which is beneficial in signal amplification tasks.
3. Low Cutoff Voltage: The low cutoff voltage enhances its efficiency in low-voltage applications.
4. Small Package: Available in a compact SOT-23 package, which saves space on circuit boards and is ideal for portable devices.
5. High Input Impedance: This characteristic ensures minimal loading of input signals.
6. RoHS Compliant: It is environmentally friendly, meeting EU standards for hazardous substances.
These features make the MMBF4393LT1G suitable for various electronic applications, including those that require reliable signal processing with minimal distortion.
Pinout
1. Gate (G) - Controls the conductivity between the source and drain. By applying voltage to the gate, you can control the flow of current through the drain-source channel.
2. Source (S) - The source terminal is where the carriers enter the channel. Current flows from source to drain when the device is in operation.
3. Drain (D) - The drain is the terminal where the carriers exit the channel.
This transistor is generally used in low-level analog signal processing and can be found in various applications such as amplifiers and switching circuits. The small package size makes it suitable for compact electronic designs.
Manufacturer
Application
1. Switching: Utilized in analog switching circuits due to fast switching speeds.
2. Amplification: Suitable for low-level signal amplification in audio, RF, and sensor applications.
3. Impedance Buffering: Acts as an impedance buffer in impedance conversion circuits.
4. Signal Processing: Used in various signal processing circuits for its low noise characteristics.
5. Oscillator Circuits: Employed in oscillator circuits needing stable frequency performance.
These applications benefit from the MMBF4393LT1G's high input impedance, low capacitance, and low noise features.