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MMBF170-7-F
+NomenclatureMOSFET N-CH 60V 500MA SOT23-3
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FabricantLa société diodes
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Pièce fabricant #MMBF170-7-F
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Fiche technique MMBF170-7-F DataSheet
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En stock11989
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Spécifications
| Attribut | Valeur |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 500mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 200mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 40 pF @ 10 V |
| Power Dissipation (Max) | 300mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Présentation
Description
The course "Introduction to MMBF170-7-F" appears to be a module identifier, typically used within academic institutions to organize courses. While specific details about this course aren't available, we can infer the following based on its code:
1. MMBF: This prefix could refer to a department or field of study. For example, it might relate to finance, business, or a specialized tech or engineering field.
2. 170: This number often indicates the course level or sequence. A 100-level course typically suggests an introductory level, possibly aimed at first-year students or newcomers to the subject.
3. 7: This could denote the term or semester in which the course is offered, though this varies by institution.
4. F: This may signify that the course is offered in the Fall semester.
For precise information about the course, including its specific curriculum, objectives, and prerequisites, you would need to refer to the course catalog or contact the academic department offering it at the institution in question.
1. MMBF: This prefix could refer to a department or field of study. For example, it might relate to finance, business, or a specialized tech or engineering field.
2. 170: This number often indicates the course level or sequence. A 100-level course typically suggests an introductory level, possibly aimed at first-year students or newcomers to the subject.
3. 7: This could denote the term or semester in which the course is offered, though this varies by institution.
4. F: This may signify that the course is offered in the Fall semester.
For precise information about the course, including its specific curriculum, objectives, and prerequisites, you would need to refer to the course catalog or contact the academic department offering it at the institution in question.
Equivalent
The MMBF170-7-F is an N-channel MOSFET transistor. Equivalent products include the NDS7002A and 2N7002, which offer similar functionality and specifications. When selecting an equivalent, check key parameters such as the voltage rating, current capacity, and package type to ensure compatibility with your application. Always verify with the datasheet for precise matching.
Features
The MMBF170-7-F is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching applications. Here are its key features:
1. N-Channel Enhancement Mode: This MOSFET operates in enhancement mode, which requires a positive gate-to-source voltage to turn on.
2. Low On-Resistance: It features low on-resistance, which ensures efficient current conduction and minimizes power loss.
3. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of around 60V and a continuous drain current (I_D) of approximately 0.2A.
4. Small Signal Switching: The MMBF170-7-F is suitable for small signal switching applications, making it ideal for low-power devices.
5. SOT-23 Package: It comes in a compact SOT-23 package, which is suitable for space-constrained designs.
6. Rugged Design: It boasts reliable operation with good thermal performance and high-speed switching capabilities.
These features make the MMBF170-7-F a versatile component for various electronic applications, including signal processing, amplification, and digital circuitry.
1. N-Channel Enhancement Mode: This MOSFET operates in enhancement mode, which requires a positive gate-to-source voltage to turn on.
2. Low On-Resistance: It features low on-resistance, which ensures efficient current conduction and minimizes power loss.
3. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of around 60V and a continuous drain current (I_D) of approximately 0.2A.
4. Small Signal Switching: The MMBF170-7-F is suitable for small signal switching applications, making it ideal for low-power devices.
5. SOT-23 Package: It comes in a compact SOT-23 package, which is suitable for space-constrained designs.
6. Rugged Design: It boasts reliable operation with good thermal performance and high-speed switching capabilities.
These features make the MMBF170-7-F a versatile component for various electronic applications, including signal processing, amplification, and digital circuitry.
Pinout
The MMBF170-7-F is an N-channel MOSFET transistor. It typically comes in a SOT-23 package, which has 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the conductivity of the MOSFET. Applying a voltage to the gate changes the electric field, which in turn influences the current flow between the drain and source.
2. Source (S): This is the terminal where the majority carriers enter the MOSFET. In an N-channel MOSFET like the MMBF170, the source is typically at a lower voltage compared to the drain.
3. Drain (D): The terminal where the majority carriers leave the MOSFET. The current flows from the drain to the source when the MOSFET is in the 'on' state.
This MOSFET is used in various applications, including switching and amplification, due to its efficiency and fast switching speed.
1. Gate (G): This pin is used to control the conductivity of the MOSFET. Applying a voltage to the gate changes the electric field, which in turn influences the current flow between the drain and source.
2. Source (S): This is the terminal where the majority carriers enter the MOSFET. In an N-channel MOSFET like the MMBF170, the source is typically at a lower voltage compared to the drain.
3. Drain (D): The terminal where the majority carriers leave the MOSFET. The current flows from the drain to the source when the MOSFET is in the 'on' state.
This MOSFET is used in various applications, including switching and amplification, due to its efficiency and fast switching speed.
Manufacturer
The MMBF170-7-F is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company focuses on serving diverse markets including consumer electronics, computing, communications, industrial, and automotive sectors. Known for its innovative solutions and comprehensive product portfolio, Diodes Incorporated offers a wide range of discrete devices such as diodes, rectifiers, transistors, MOSFETs, and other semiconductor components.
Application
The MMBF170-7-F is a N-channel MOSFET transistor commonly used in various electronic applications. Its primary application areas include:
1. Switching Applications: Used in power management and load switching due to its high-speed switching capabilities.
2. Amplification: Utilized in signal amplification circuits given its ability to handle low to moderate power levels.
3. Analog Circuits: Applied in analog signal processing for its linear characteristics.
4. RF Circuits: Suitable for radio frequency applications because of its low capacitance and high-frequency operation.
5. Battery Management Systems: Implemented in circuits requiring efficient power control and low power consumption.
Its versatility makes it suitable for use in consumer electronics, automotive systems, and communication equipment.
1. Switching Applications: Used in power management and load switching due to its high-speed switching capabilities.
2. Amplification: Utilized in signal amplification circuits given its ability to handle low to moderate power levels.
3. Analog Circuits: Applied in analog signal processing for its linear characteristics.
4. RF Circuits: Suitable for radio frequency applications because of its low capacitance and high-frequency operation.
5. Battery Management Systems: Implemented in circuits requiring efficient power control and low power consumption.
Its versatility makes it suitable for use in consumer electronics, automotive systems, and communication equipment.
Package
The MMBF170-7-F is a N-channel MOSFET transistor, and it is typically encapsulated in a SOT-23 package. This package type is small, surface-mount, and commonly used for a range of electronic applications where space conservation is crucial.
