MMBD6050LT1G

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MMBD6050LT1G

+Nomenclature

DIODE STANDARD 70V 200MA SOT233

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Spécifications

Attribut Valeur
Part Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 70 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 100 nA @ 50 V
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number MMBD6050
Reverse Recovery Time (trr) 4 ns

Présentation

Description

The MMBD6050LT1G is a dual, general-purpose Schottky diode designed for high-speed switching applications. It features low forward voltage drop and fast recovery time, making it ideal for rectification tasks in power supplies and signal detection circuits. The device is housed in a compact SOT-23 package, offering a space-efficient solution for electronic designs.
Key specifications include a maximum reverse voltage of around 40V and a forward current rating of up to 1A. The low leakage current at high temperatures enhances its reliability in various applications. The MMBD6050LT1G is suitable for use in consumer electronics, telecommunications, and automotive systems, where efficiency and performance are critical.
Overall, this diode is a versatile component that helps improve circuit efficiency by minimizing energy loss during operation.

Equivalent

The MMBD6050LT1G is a dual silicon N-channel MOSFET designed for switching applications. Equivalent products include the BSS138, BSS123, and BS170, which are also N-channel MOSFETs. For more precise replacements, consider factors like voltage rating, current handling, and package type. Always verify specifications from the manufacturer's datasheet for compatibility in your specific application.

Features

The MMBD6050LT1G is a dual, general-purpose Schottky barrier diode designed for low-voltage, high-speed switching applications. Key features include:
- Low Forward Voltage Drop: Ensures efficient operation and reduced power loss.
- High Speed: Capable of fast switching times, making it suitable for high-frequency applications.
- Reverse Voltage Rating: Typically supports up to 30V, allowing for versatility in various circuits.
- Low Leakage Current: Maintains minimal current leakage, enhancing overall efficiency.
- Surface Mount Package: Offered in a compact SOT-23 package, ideal for space-constrained designs.
- Dual Diode Configuration: Provides two diodes in a single package, simplifying PCB layout and reducing component count.
- RoHS Compliant: Meets environmental regulations, making it suitable for green electronics.
These features make the MMBD6050LT1G suitable for applications such as signal clipping, rectification, and protection circuits in consumer electronics, automotive, and telecommunications.

Pinout

The MMBD6050LT1G is a dual small-signal diode in a SOT-23 package. It features a total of 3 pins. The pinout and their functions are as follows:
1. Pin 1 (Anode 1) - The anode of the first diode.
2. Pin 2 (Cathode 1/Anode 2) - The cathode of the first diode and the anode of the second diode.
3. Pin 3 (Cathode 2) - The cathode of the second diode.
This configuration allows for versatility in circuit design, enabling applications such as signal clamping, level shifting, and general-purpose switching. The MMBD6050LT1G is known for low forward voltage and fast switching speed, making it suitable for various electronic applications.

Manufacturer

The MMBD6050LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of semiconductor solutions, including power management, analog, and digital signal processing components. The company serves various markets, including automotive, industrial, and consumer electronics, providing innovative technologies that enable energy-efficient designs. ON Semiconductor focuses on sustainability and reducing environmental impact in its manufacturing processes and product offerings.

Application

The MMBD6050LT1G is a dual general-purpose Schottky barrier diode, commonly used in various applications, including:
1. Rectification: In power supply circuits for efficient rectification.
2. Clamping: To protect sensitive components from voltage spikes.
3. Signal Demodulation: In RF and communication circuits.
4. Reverse Polarity Protection: Preventing damage from incorrect power connections.
5. Fast Switching: Suitable for high-speed switching applications in digital circuits.
Its low forward voltage drop and fast switching characteristics make it ideal for high-efficiency designs.

Package

The MMBD6050LT1G is packaged in a SOT-23 (Small Outline Transistor) package type, which is a compact, surface-mount package often used for various electronic components.

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