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MJD117T4G
+NomenclatureTRANS PNP DARL 100V 2A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #MJD117T4G
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Fiche technique MJD117T4G DataSheet
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Package TO-252-3
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En stock13639
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | PNP - Darlington |
| Current - Collector(Ic)(Max) | 2 A |
| Voltage - Collector Emitter Breakdown(Max) | 100 V |
| Vce Saturation(Max) @ Ib Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff(Max) | 20µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 1000 @ 2A, 3V |
| Power - Max | 1.75 W |
| Frequency - Transition | 25MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
If MJD117T4G relates to a course, it could entail an introduction to its primary themes, objectives, and structure. For a technological or scientific concept, it would involve a brief overview of its purpose, applications, and significance in its respective field. Given its specificity, I recommend checking the originating source or institution for more detailed and accurate information.
Equivalent
1. TIP127 - A PNP power transistor with similar specifications.
2. BD140 - A medium-power PNP transistor, though with a slightly different current rating.
3. 2SB649 - Another PNP transistor alternative, depending on specific application needs.
Always ensure to compare electrical characteristics and package types before substituting.
Features
1. Polarity: The device is unidirectional, meaning it only allows current to flow in one direction.
2. Power Dissipation: It typically has a power dissipation capacity around 400 watts for a 10/1000 µs pulse waveform.
3. Breakdown Voltage: The breakdown voltage usually falls between specific values, often around 117 volts, with tight tolerances.
4. Clamping Voltage: It offers a clamping voltage that limits the peak voltage during a transient event, often specified in its datasheet.
5. Low Leakage Current: It maintains a low leakage current when operating below breakdown voltage.
6. Response Time: The response time is extremely fast, typically in the picoseconds range, making it effective at transient suppression.
7. Package Type: Encased in a standard surface-mount package for easy integration into various PCB designs.
8. Temperature Range: Operates across a wide temperature range, making it suitable for various environmental conditions.
These features make the MJD117T4G ideal for protecting sensitive electronic components in various applications.
Pinout
1. Pin 1 (Base): This pin is the control terminal for the transistor. A small current through the base controls a larger current flow between the collector and emitter.
2. Pin 2 (Collector): This is the pin where the main current flows from the collector to the emitter when the transistor is in the 'on' state.
3. Pin 3 (Emitter): The current flows out of this pin when the transistor is conducting.
4. Tab (Collector): The tab is electrically connected to the collector and is used for heat dissipation.
The MJD117T4G is used in various applications requiring high current and voltage handling, such as power amplification and switching.