Images à titre indicatif uniquement
MGSF2N02ELT1G
+NomenclatureMOSFET N-CH 20V 2.8A SOT23-3
-
FabricantSemi - conducteurs
-
Pièce fabricant #MGSF2N02ELT1G
-
Package SOT-23
-
En stock4978
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 2.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.5 nC @ 4 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 150 pF @ 5 V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Présentation
Description
The MGSF2N02ELT1G is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It's designed for use in electronic circuits to switch and amplify electronic signals. These components are crucial in managing power in various applications, from consumer electronics to industrial systems.
Key specifications of the MGSF2N02ELT1G include a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 2.8A. It features an N-channel configuration, which means it conducts when a positive voltage is applied to the gate relative to the source. Its compact SOT-23 surface-mount package makes it suitable for high-density circuit board designs.
The device is valued for its fast switching speeds and low on-resistance, which enhance the efficiency of power systems. It is typically used in applications such as DC-DC converters, load switches, and battery-powered devices. Its reliability and performance make it a popular choice among engineers for creating energy-efficient electronic products.
Key specifications of the MGSF2N02ELT1G include a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 2.8A. It features an N-channel configuration, which means it conducts when a positive voltage is applied to the gate relative to the source. Its compact SOT-23 surface-mount package makes it suitable for high-density circuit board designs.
The device is valued for its fast switching speeds and low on-resistance, which enhance the efficiency of power systems. It is typically used in applications such as DC-DC converters, load switches, and battery-powered devices. Its reliability and performance make it a popular choice among engineers for creating energy-efficient electronic products.
Equivalent
The MGSF2N02ELT1G is an N-channel MOSFET. Equivalent products can include similar N-channel MOSFETs such as the IRF520, 2N7002, and BS170, depending on the specific voltage and current requirements of your application. Always verify the specifications like drain-source voltage (Vds), continuous drain current (Id), and package type to ensure compatibility with your design.
Features
The MGSF2N02ELT1G is an N-channel MOSFET designed for general-purpose switching applications. Key features include:
1. N-Channel MOSFET: Optimized for switching applications with efficient control of power.
2. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) and a specified continuous drain current (I_D) to handle a standard level of power.
3. R_DS(on) Specifications: Low on-resistance for reduced power loss and improved efficiency during operation.
4. Package Type: Often available in a small surface-mount package, like SOT-23, making it suitable for compact circuit designs.
5. Thermal Performance: Designed to provide reliable operation under specified thermal conditions, ensuring stability and longevity.
6. Applications: Commonly used in applications like power management, load switching, and DC-DC converters.
7. Complementary to Other Devices: Can be paired with P-channel MOSFETs for creating more complex switching circuits.
These features make the MGSF2N02ELT1G a versatile choice for various electronic applications requiring efficient switching solutions.
1. N-Channel MOSFET: Optimized for switching applications with efficient control of power.
2. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) and a specified continuous drain current (I_D) to handle a standard level of power.
3. R_DS(on) Specifications: Low on-resistance for reduced power loss and improved efficiency during operation.
4. Package Type: Often available in a small surface-mount package, like SOT-23, making it suitable for compact circuit designs.
5. Thermal Performance: Designed to provide reliable operation under specified thermal conditions, ensuring stability and longevity.
6. Applications: Commonly used in applications like power management, load switching, and DC-DC converters.
7. Complementary to Other Devices: Can be paired with P-channel MOSFETs for creating more complex switching circuits.
These features make the MGSF2N02ELT1G a versatile choice for various electronic applications requiring efficient switching solutions.
Pinout
The MGSF2N02ELT1G is a N-channel MOSFET. It typically comes in a SOT-23 package, which has three pins. The pin count and functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This is the pin through which current enters the MOSFET.
In a typical configuration, the gate voltage determines whether the MOSFET is in the conductive (on) state or the non-conductive (off) state. The MGSF2N02ELT1G is used in various applications such as switching, load management, and amplification due to its efficient switching characteristics and compact form factor.
1. Gate (G): This pin controls the MOSFET's switching operation. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This is the pin through which current enters the MOSFET.
In a typical configuration, the gate voltage determines whether the MOSFET is in the conductive (on) state or the non-conductive (off) state. The MGSF2N02ELT1G is used in various applications such as switching, load management, and amplification due to its efficient switching characteristics and compact form factor.
Manufacturer
The MGSF2N02ELT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a global company that designs and manufactures semiconductor components. They offer a wide range of products including power and signal management, logic, discrete components, and custom devices for automotive, industrial, cloud, and IoT applications. The company focuses on energy-efficient innovations to help customers reduce global energy use.
Application
The MGSF2N02ELT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. Its primary applications include:
1. Low Voltage Switching: Suitable for low-voltage DC-DC converters and general-purpose switching.
2. Load Switching: Used in battery-powered devices for efficient load control.
3. Amplification: Acts as an amplifier in analog circuits for signal conditioning.
4. Motor Control: Useful in controlling small motors in portable and compact electronic devices.
5. Power Management: Helps in power distribution and management tasks in electronics.
6. Consumer Electronics: Applied in smartphones, tablets, and other portable gadgets for power control.
Its compact size and efficient operation make it ideal for space-constrained applications.
1. Low Voltage Switching: Suitable for low-voltage DC-DC converters and general-purpose switching.
2. Load Switching: Used in battery-powered devices for efficient load control.
3. Amplification: Acts as an amplifier in analog circuits for signal conditioning.
4. Motor Control: Useful in controlling small motors in portable and compact electronic devices.
5. Power Management: Helps in power distribution and management tasks in electronics.
6. Consumer Electronics: Applied in smartphones, tablets, and other portable gadgets for power control.
Its compact size and efficient operation make it ideal for space-constrained applications.
Package
The MGSF2N02ELT1G is a MOSFET part typically packaged in a SOT-23 (Small Outline Transistor) package. This package type is compact, suitable for surface-mount technology, and widely used in applications where space is limited.
