MBRAF360T3G

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MBRAF360T3G

+Nomenclature

DIODE SCHOTTKY 60V 4A SMA-FL

  • FabricantSemi - conducteurs

  • Pièce fabricant #MBRAF360T3G

  • Package SMA-FL

  • En stock4035

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified(Io) 4A
Voltage - Forward (Vf) (Max) @ If 630 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 3 mA @ 60 V
Mounting Type Surface Mount
Supplier Device Package SMA-FL

Présentation

Description

The MBRAF360T3G is a 3rd-generation BRAF inhibitor designed to target BRAF V600 mutations, commonly found in cancers like melanoma. It builds on earlier BRAF inhibitors (e.g., vemurafenib, dabrafenib) with improved potency, selectivity, and reduced off-target effects, potentially minimizing resistance and side effects.
Key features:
- Enhanced efficacy against BRAF-mutant tumors.
- Reduced paradoxical MAPK activation, lowering secondary cancer risks.
- Better pharmacokinetics for optimized dosing.
It may be used alone or in combination with MEK inhibitors (e.g., trametinib) to improve outcomes. Clinical trials are ongoing to confirm its safety and superiority over existing therapies.

Equivalent

The MBRAF360T3G is a Schottky barrier diode. Equivalent alternatives include:
- STPS3L40U (STMicroelectronics)
- SS3P6 (Vishay)
- B360A-13-F (Diodes Incorporated)
- PMEG4005ER (Nexperia)
These offer similar specs (3A, 40V). Verify pin compatibility and electrical characteristics for your application.

Features

The MBRAF360T3G is a Schottky barrier diode with the following key features:
- Low Forward Voltage Drop: Ensures minimal power loss.
- High Current Capability: Supports up to 3A continuous forward current.
- Fast Switching Speed: Ideal for high-frequency applications.
- Low Reverse Leakage Current: Enhances efficiency.
- High Surge Current Capacity: Robust performance under transient conditions.
- Compact SOD-123 Package: Space-saving design for modern electronics.
- Wide Operating Temperature Range: -65°C to +150°C for versatile use.
Commonly used in power rectification, DC-DC converters, and reverse polarity protection.

Manufacturer

The MBRAF360T3G is a Schottky barrier diode manufactured by ON Semiconductor (now known as onsemi).
onsemi is a global semiconductor company specializing in power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient innovations.
For detailed specifications, refer to onsemi's official datasheets or product pages.

Package

The MBRAF360T3G is a Schottky Barrier Diode (SBD) in a SOD-123FL surface-mount package. It features low forward voltage drop and high-speed switching, suitable for power rectification and protection circuits. The compact SOD-123FL package is designed for efficient PCB space utilization.

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