MBR2H200SFT1G

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MBR2H200SFT1G

+Nomenclature

DIODE SCHOTTKY 200V 2A SOD123FL

  • FabricantSemi - conducteurs

  • Pièce fabricant #MBR2H200SFT1G

  • Package SOD-123FL

  • En stock5932

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified(Io) 2A
Voltage - Forward (Vf) (Max) @ If 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 200 V
Mounting Type Surface Mount
Supplier Device Package SOD-123FL

Présentation

Description

The MBR2H200SFT1G is a dual Schottky barrier diode from ROHM Semiconductor, designed for high-efficiency rectification in power applications. Key features:
- Voltage/Current Rating: 20V, 2A per diode.
- Low Forward Voltage (VF): ~0.5V (typ) for reduced power loss.
- Fast Switching: Optimized for high-speed circuits.
- Compact Package: SOP-8 (dual common cathode).
Ideal for DC-DC converters, reverse polarity protection, and power management in portable devices, automotive systems, and industrial equipment. Its low leakage current and thermal efficiency enhance reliability in compact designs.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the MBR2H200SFT1G (200V, 2A Schottky diode) include:
- MBR2H100SFT1G (100V version)
- MBR2H150SFT1G (150V version)
- SS2H200 (200V, 2A Schottky diode from Vishay)
- STPS2H200U (200V, 2A Schottky diode from STMicroelectronics)
These alternatives offer similar voltage and current ratings. Always verify datasheet specs for exact compatibility.

Features

The MBR2H200SFT1G is a Schottky barrier diode with the following key features:
- Voltage Rating: 200V (Reverse Voltage)
- Current Rating: 2A (Average Forward Current)
- Low Forward Voltage Drop: ~0.85V (typical at 1A)
- Fast Switching: Ideal for high-frequency applications
- High Efficiency: Low power loss due to Schottky design
- Package: TO-277B (SMB Flat Lead) for compact PCB mounting
- Operating Temperature: -55°C to +150°C
Suitable for power rectification, DC-DC converters, and reverse polarity protection.

Application

The MBR2H200SFT1G is a Schottky barrier diode designed for high-efficiency applications. Key areas include:
- Power Supplies: Used in switching regulators, DC-DC converters, and AC-DC adapters for low forward voltage drop.
- Reverse Polarity Protection: Safeguards circuits in automotive and industrial systems.
- Solar Energy Systems: Enhances efficiency in photovoltaic inverters.
- Battery Charging: Prevents reverse current in portable devices and EVs.
- High-Frequency Circuits: Suitable for fast-switching applications due to low recovery time.
Its compact SOD-123FL package makes it ideal for space-constrained designs.

Package

The MBR2H200SFT1G is a Schottky barrier rectifier diode from ON Semiconductor, available in a TO-252-3 (DPAK) surface-mount package. This package is compact, suitable for high-efficiency power applications, and features a thermally efficient design with an exposed pad for heat dissipation. It is commonly used in power supplies, converters, and reverse polarity protection circuits.

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