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MBR120200CT
+NomenclatureDIODE SCHOTTKY 200V 60A 2 TOWER
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FabricantGenesic semiconducteurs
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Pièce fabricant #MBR120200CT
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Fiche technique MBR120200CT DataSheet
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Package Twin Tower
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En stock9524
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Spécifications
| Attribut | Valeur |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified(Io)(per Diode) | 60A |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 60 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 1 mA @ 200 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
