Images à titre indicatif uniquement
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FabricantEsmt (Elite Semiconductor Storage Technology)
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Pièce fabricant #M14D5121632A-2.5BG2A
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Fiche technique M14D5121632A-2.5BG2A DataSheet
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En stock17081
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Spécifications
| Attribut | Valeur |
| Manufacturer | ESMT(Elite Semicon Memory Tech) |
| Package / Case | BGA-84(8x12.5) |
Présentation
Equivalent
- MT47H32M16HR-25E (Micron)
- K4T51163QG-HCE6 (Samsung)
- HY5PS1G1631C (Hynix)
These are 512Mb DDR2 chips with similar specs (speed, density, organization). Verify pin compatibility and timing parameters for exact replacement.
Pinout
- Pin Count: 84-ball FBGA (Fine-Pitch Ball Grid Array).
- Key Functions:
- 16-bit data bus (DQ0-DQ15)
- 13-bit address bus (A0-A12)
- 2.5V operating voltage
- 4 internal banks
- CAS Latency (CL): 3, 4, or 5
- 400 Mbps data rate (DDR2-400)
- Supports burst lengths of 4/8
Commonly used in consumer electronics, networking, and embedded systems.
Application
- Embedded systems (industrial automation, medical devices)
- Networking equipment (routers, switches, servers)
- Consumer electronics (smart TVs, set-top boxes)
- Automotive infotainment & ADAS
- Aerospace & defense applications
It offers low power consumption, high bandwidth (2.5Gbps), and reliability, making it suitable for performance-critical and power-sensitive applications.