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L6386ED
+NomenclatureIC GATE DRVR HALF-BRIDGE 14SO
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FabricantSemi - conducteurs optiques
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Pièce fabricant #L6386ED
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Fiche technique L6386ED DataSheet
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Package SO-14
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En stock2590
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 17V (Max) |
| Logic Voltage - VILVIH | 1.5V, 3.6V |
| Current - Peak Output(Source Sink) | 400mA, 650mA |
| Input Type | Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 50ns, 30ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
L6386ED could be a course identifier, potentially within an academic setting like a university. An introduction to such a course would generally cover the course's main focus, objectives, and key themes. For instance, if L6386ED were a course in Environmental Design, the introduction might highlight topics such as sustainable design principles, the integration of environmental considerations in architectural planning, and current trends in eco-friendly construction. Students might explore case studies, engage in design projects, and develop skills in using eco-design software. The course would aim to equip participants with the knowledge needed to contribute to environmentally responsible design practices in their professional careers. For precise details, it would be best to consult the syllabus or academic institution offering the course.
Equivalent
1. IR2110 from Infineon Technologies/Microchip
2. IRS2110 from Infineon Technologies
3. FAN7380 from ON Semiconductor
4. UCC27714 from Texas Instruments
These alternatives offer similar functionality for driving high-side and low-side MOSFETs or IGBTs. Always check the specific requirements and features, such as voltage ratings and package types, to ensure compatibility.
Features
1. High-Voltage Capability: It can handle up to 600V, making it suitable for applications involving high voltages.
2. Integrated Bootstrap Diode: This feature simplifies the design by reducing the number of external components needed.
3. Under-Voltage Lockout (UVLO): It ensures the IC operates only when the supply voltage is within a safe range, protecting the device from low-voltage conditions.
4. Output Current Capability: The device provides high current gate drive outputs to ensure fast switching of the MOSFETs/IGBTs.
5. Dead Time Control: This feature prevents shoot-through conditions by ensuring non-overlapping gate drive signals.
6. High dv/dt Immunity: The IC is designed to be robust against high dv/dt transients.
7. CMOS/TTL Compatible Inputs: It can interface easily with digital control signals.
These features make the L6386ED suitable for various applications, including motor drives, power supplies, and lighting systems, among others.
Pinout
1. VCC: Supply voltage for the low-side section.
2. GND: Ground reference for the low-side section.
3. IN: Input signal for controlling the gate driver.
4. SD: Shutdown pin for disabling the driver.
5. VBOOT: Bootstrap supply voltage for the high-side section.
6. HVG: High-side gate drive output.
7. OUT: Output pin for the driver.
8. LVG: Low-side gate drive output.
9. NC: No connection.
10. VSO: Source output for the high-side driver.
11. COM: Common ground reference for low-side and high-side sections.
12. VS: High-side floating supply offset voltage.
13. PGND: Power ground.
14. NC: No connection.
The L6386ED is used for efficient switching in various applications such as motor drives, power supplies, and other high-voltage circuits. Its design ensures robust performance with high-speed switching capabilities.