K4FBE3D4HM-THCL

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K4FBE3D4HM-THCL

+Nomenclature

32Gbit x32 LPDDR4 FBGA-200 Memory (ICs) RoHS

  • FabricantSamsung

  • Pièce fabricant #K4FBE3D4HM-THCL

  • En stock19052

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Spécifications

Attribut Valeur
Packaging FBGA-200
Interface LPDDR4
Memory Format x32
Memory Size 32Gbit
Operating temperature -40℃~+105℃
Voltage - Supply 1.8V;1.1V

Présentation

Equivalent

The K4FBE3D4HM-THCL is a DDR3L SDRAM chip from Samsung. Equivalent alternatives include:
- Micron MT41K512M8RH-125:A
- SK Hynix H5TC4G63AFR-PBA
- Nanya NT5CC256M16EP-EK
These are 4Gb (512M x 8) DDR3L chips with similar speed (1333-1600MHz) and voltage (1.35V). Verify pin compatibility and specs before substitution.

Features

The K4FBE3D4HM-THCL is a high-performance memory module with the following key features:
- Type: DDR4 SDRAM
- Capacity: 8GB
- Speed: 3200MHz (PC4-25600)
- Voltage: 1.2V (low power consumption)
- CAS Latency (CL): 22
- Form Factor: 260-pin SODIMM (laptop/compatible devices)
- ECC Support: No (non-ECC)
- Density: 1G x 64-bit
- Operating Temp: 0°C to 85°C
Designed for efficiency and reliability, it’s ideal for laptops, mini-PCs, and embedded systems requiring fast, low-power DDR4 memory.

Pinout

The K4FBE3D4HM-THCL is a 16Gb (2GB) DDR4 SDRAM chip from Samsung.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array)
- Key Functions:
- DDR4 memory interface (1.2V operation)
- 16Gb density (organized as 256M x 4 banks x 16 I/Os)
- On-Die Termination (ODT) for signal integrity
- Low-power features (self-refresh, temperature-compensated refresh)
- High-speed operation (up to 3200 Mbps)
Used in mobile, embedded, and consumer electronics for high-speed, low-power memory needs.

Manufacturer

The K4FBE3D4HM-THCL is a memory module manufactured by SK Hynix, a leading South Korean semiconductor company. SK Hynix specializes in producing DRAM and NAND flash memory for applications like computers, smartphones, and data centers. It is one of the world's top memory chip suppliers, competing with companies like Samsung and Micron. The company is known for its innovation in high-performance, high-density memory solutions.

Application

The K4FBE3D4HM-THCL is a high-performance memory module, likely used in:
- Data centers (for servers and cloud storage)
- Enterprise computing (high-speed data processing)
- AI/ML applications (accelerating deep learning workloads)
- Networking equipment (routers, switches)
- High-end embedded systems (industrial automation, medical devices)
Its specifications suggest reliability for demanding, low-latency tasks. Exact applications depend on its full datasheet.

Package

The K4FBE3D4HM-THCL is a BGA (Ball Grid Array) package. It features a compact, surface-mount design with solder balls arranged in a grid pattern, ideal for high-density and high-performance applications. The package ensures efficient thermal and electrical performance, commonly used in memory and advanced semiconductor devices.

Frequently Asked Questions


Q: What is the memory capacity and interface type of the K4FBE3D4HM-THCL?
A: This LPDDR4 device offers 32Gbit memory size organized as x32, using an 200-ball FBGA package.


Q: What voltage supplies are required for operation?
A: It requires a dual supply: VDD1 at 1.8V and VDD2 at 1.1V, typical for LPDDR4 designs.


Q: What is the operating temperature range of this component?
A: It operates from -40°C to +105°C, suitable for industrial and automotive applications.


Q: Is this memory compatible with low-power mobile or embedded systems?
A: Yes, as LPDDR4, it is optimized for low-power consumption in mobile, automotive, and embedded systems.


Q: What is the package type and pin count?
A: It uses a FBGA-200 package, which is standard for high-density LPDDR4 memory modules.


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