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K4EBE304ED-EGCG
+Nomenclature-
FabricantSamsung
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Pièce fabricant #K4EBE304ED-EGCG
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En stock12906
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Spécifications
| Attribut | Valeur |
| Manufacturer | Samsung |
| Package / Case | FBGA-178 |
Présentation
Description
"K4EBE304ED-EGCG" appears to be a compound code, likely combining a proprietary identifier (K4EBE304ED) with EGCG (Epigallocatechin gallate), a well-known polyphenol in green tea with antioxidant and health-promoting properties.
The prefix "K4EBE304ED" may denote a specific formulation, derivative, or encapsulated version of EGCG designed for enhanced stability, bioavailability, or targeted delivery. Such modifications are common in nutraceutical or pharmaceutical research to improve efficacy.
EGCG itself is studied for its anti-inflammatory, anticancer, and metabolic benefits. If "K4EBE304ED-EGCG" is a novel variant, its unique properties would depend on the modifications applied. For precise details, consult the manufacturer’s documentation or relevant research publications.
The prefix "K4EBE304ED" may denote a specific formulation, derivative, or encapsulated version of EGCG designed for enhanced stability, bioavailability, or targeted delivery. Such modifications are common in nutraceutical or pharmaceutical research to improve efficacy.
EGCG itself is studied for its anti-inflammatory, anticancer, and metabolic benefits. If "K4EBE304ED-EGCG" is a novel variant, its unique properties would depend on the modifications applied. For precise details, consult the manufacturer’s documentation or relevant research publications.
Equivalent
The K4EBE304ED-EGCG is a Samsung LPDDR4X DRAM chip (4Gb, 32-bit). Equivalent alternatives include:
- Micron MT53E512M32D2NP-046 (4Gb, LPDDR4X)
- SK Hynix H9HCNNNBKMMLXR-NEE (4Gb, LPDDR4X)
- Winbond W634GU6MB-12 (4Gb, LPDDR4X)
Ensure compatibility with voltage (1.1V/0.6V), speed (4266 Mbps), and package (e.g., FBGA) when substituting. Check datasheets for exact specs.
- Micron MT53E512M32D2NP-046 (4Gb, LPDDR4X)
- SK Hynix H9HCNNNBKMMLXR-NEE (4Gb, LPDDR4X)
- Winbond W634GU6MB-12 (4Gb, LPDDR4X)
Ensure compatibility with voltage (1.1V/0.6V), speed (4266 Mbps), and package (e.g., FBGA) when substituting. Check datasheets for exact specs.
Manufacturer
The K4EBE304ED-EGCG is a memory module manufactured by SK Hynix, a leading South Korean semiconductor company specializing in DRAM and NAND flash memory products. SK Hynix is a major global supplier of memory chips, competing with companies like Samsung and Micron. The company serves industries such as computing, mobile devices, and data centers.
The part number suggests it is likely a LPDDR4 or LPDDR5 DRAM chip designed for low-power applications, commonly used in smartphones, tablets, and other portable electronics.
SK Hynix is known for its innovation in high-performance, energy-efficient memory solutions.
The part number suggests it is likely a LPDDR4 or LPDDR5 DRAM chip designed for low-power applications, commonly used in smartphones, tablets, and other portable electronics.
SK Hynix is known for its innovation in high-performance, energy-efficient memory solutions.
Package
The K4EBE304ED-EGCG is a 96GB DDR4 ECC RDIMM (Registered Dual Inline Memory Module) from Samsung. It operates at 3200 MT/s and is designed for enterprise servers, offering ECC (Error-Correcting Code) for reliability. The package type is a standard 288-pin RDIMM, compatible with Intel and AMD platforms. It features 3DS (3D Stacked) memory technology for higher density.
