K4E8E324EB-EGCF

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K4E8E324EB-EGCF

+Nomenclature

1.7V~1.95V 8Gbit 933MHz LPDDR3 SDRAM FBGA-178 Memory (ICs) RoHS

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Spécifications

Attribut Valeur
Packaging FBGA-178
Clock Frequency 933MHz
Memory Format LPDDR3 SDRAM
Memory Size 8Gbit
Operating temperature -25℃~+85℃
Voltage - Supply 1.7V~1.95V

Présentation

Equivalent

The K4E8E324EB-EGCF is a 4Gb LPDDR3 SDRAM chip from Samsung. Equivalent alternatives include:
- Micron MT41K256M16TW-107 (4Gb LPDDR3)
- SK Hynix H9TKNNN4GDMPR (4Gb LPDDR3)
- Nanya NT6CL256M32CM (4Gb LPDDR3)
Ensure compatibility with voltage, speed (e.g., 1866 Mbps), and pin configuration before substitution. Check datasheets for exact matching.

Features

The K4E8E324EB-EGCF is a high-performance DDR4 memory module by Samsung, designed for enterprise and data center applications. Key features include:
- Capacity: 32GB per module.
- Speed: 3200 Mbps (PC4-25600).
- Type: ECC Registered DIMM (RDIMM) for error correction and stability.
- Voltage: 1.2V, ensuring energy efficiency.
- Density: 8Gb based on advanced DRAM technology.
- Reliability: Optimized for servers, cloud, and AI workloads.
This module supports high-bandwidth applications while maintaining low power consumption and robust error handling.

Manufacturer

The K4E8E324EB-EGCF is a DDR4 DRAM module manufactured by Samsung Electronics, a leading South Korean multinational specializing in semiconductors, consumer electronics, and telecommunications. Samsung is one of the world's largest memory chip producers, known for high-performance memory solutions used in computing, mobile, and enterprise applications.
This specific module is a 4Gb (512MB) DDR4 SDRAM chip, typically used in devices requiring efficient, low-power memory, such as smartphones, tablets, and embedded systems. Samsung's DRAM products are widely recognized for reliability and innovation in the memory industry.

Application

The K4E8E324EB-EGCF is a high-performance DDR4 SDRAM memory chip, primarily used in:
1. Computing Systems – Servers, workstations, and high-end PCs requiring fast, reliable memory.
2. Data Centers – Cloud computing and enterprise storage solutions for efficient data processing.
3. Networking Equipment – Routers, switches, and 5G infrastructure needing low-latency memory.
4. AI/ML Applications – Accelerating deep learning and big data analytics workloads.
5. Embedded Systems – Industrial automation, medical devices, and automotive electronics.
Its high speed (up to 3200 Mbps) and low power consumption make it ideal for demanding applications.

Package

The K4E8E324EB-EGCF is a LPDDR4X memory package, likely in a PoP (Package-on-Package) or FBGA (Fine-Pitch Ball Grid Array) form factor, commonly used in mobile devices like smartphones. It features low power consumption and high-speed performance. For exact details, refer to the manufacturer's datasheet (e.g., Samsung).

Frequently Asked Questions


Q: What is the memory capacity and bus configuration of this LPDDR3?
A: It has an 8Gbit (1GB) density, typically organized as 128M x 64 or 2 x 32-bit channels for LPDDR3.


Q: What is the operating voltage range for this K4E8E324EB-EGCF?
A: It operates from 1.7V to 1.95V, compatible with standard LPDDR3 low-power memory supply requirements.


Q: What is the maximum clock frequency supported by this device?
A: It supports a clock frequency of up to 933MHz, equivalent to a data rate of 1866 Mbps per pin.


Q: What is the temperature range for reliable operation?
A: The specified operating temperature range is -25°C to +85°C, suitable for industrial or consumer applications.


Q: What package type does this memory use?
A: It comes in an FBGA-178 package, a standard 178-ball fine-pitch ball grid array for LPDDR3 SDRAM.


Q: Can this be used in mobile or embedded system designs?
A: Yes, as LPDDR3 SDRAM, it is ideal for low-power portable devices, embedded systems, and automotive infotainment.


Q: What memory format does this part belong to?
A: It is specified as LPDDR3 SDRAM (Low Power Double Data Rate 3 Synchronous DRAM).


Q: Does this component require a specific voltage for core and I/O?
A: It uses a single supply range (1.7V–1.95V) for both core and I/O, simplifying power design.


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